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Part: FDS7064SN3
Category:
Description: 30V N-channel Powertrench SyncFET�
Company: Fairchild Semiconductor
Datasheet: Download FDS7064SN3 datasheet File size : 117 kB
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FDS7064SN3
February 2004
FDS7064SN3
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS7064SN3 is designed to improve the efficiency of Buck Regulators. Used as the Synchronous rectifier, (Low side MOSFET), losses can be reduced, not only in this device, but also in the Control switch, (High side MOSFET). After the low side MOSFET turns off, reverse recovery current in the body diode is dissipated in the High Side device. A Discrete Schottky diode in parallel with the Low Side MOSFET can lower the reverse recovery current, but parasitic PCB and Package Inductance reduce the effectiveness of the TM technology reduces this Schottky. SyncFET inductance to a minimum by providing a monolithic solution (MOSFET and Schottky in the same die), resulting in optimum performance. ·
Features
RDS(ON) = 8.0 m @ VGS = 10 V RDS(ON) = 9.5 m @ VGS = 4.5 V
· 16 A, 30 V
· High performance trench technology for extremely low RDS(ON) · No inductance between MOSFET and Schottky · 40% reduction in Body Diode Forward Voltage · Optimized to reduce losses in Synchronous Buck Regulators · FLMP SO-8 package for enhanced thermal performance.
Applications
· Synchronous Rectifier
D
FLMP SO-8
N DC NC D NC D NC
D
5 6
Bottom-side Drain Contact
4 3 2 1
Pin 1SO-
G SG SS SS S
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W °C
16 60 3.13 1.5 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7064SN3
2004 Fairchild Semiconductor Corporation
Device FDS7064SN3
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS7064SN3 Rev C1 (W)
FDS7064SN3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 16 A ID = 14 A ID = 16 A, TJ = 125°C ID = 16 A
Min
30
Typ
Max Units
V
Off Characteristics
26 500 ±100 1 1.4 2 6.5 7.5 9.1 70 8.0 9.5 11.5 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance
V mV/°C m
gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tR R QRR
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
2800 530 190 1.4
pF pF pF 20 22 80 33 35 ns ns ns ns nC nC nC
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
11 20 50 18
VDS = 15 V, ID = 16 A, VGS = 5.0 V
25 6 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Schottky Diode Forward Current DrainSource Schottky Diode (Note 2) VGS = 0 V, IS = 4.3 A Forward Voltage IF = 16 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 4.3 0.4 22 20 0.7 A V ns nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7064SN3 Rev C1 (W)
FDS7064SN3
Typical Characteristics
60.00 50.00 ID, DRAIN CURRENT (A) 40.00 30.00 20.00 10.00 2.0V 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50
2.25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS=10.0 V 3.5V 6.0V 4.5V 2.5V 3.0V VGS = 2.5V
2 1.75 1.5 1.25 1 0.75 0 10 20 30 40 50 60
3.0V 3.5V 4.0V 4.5V 6.0V 10.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
40 RDS(ON), ON-RESISTANCE (MILLIOHM)
1.60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 16A VGS = 10V 1.40
ID =8A
30
1.20
20
1.00
TA = 125oC
10
0.80
TA = 25oC
0.60 -50 -25 0 25 50 75 100
o
125
150
0 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
60 50
ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
VGS = 0V 10 TA = 125oC 1 25 C -55 C 0.1
o o
40 30 20 10 0 1 1.5 2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
o
TA = 125oC 25oC
-55 C
0.01 0.1 0.3 0.5 0.7 0.9
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7064SN3 Rev C1 (W)
FDS7064SN3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16A 8 VDS = 10V 6 15V 4 20V CAPACITANCE (pF) 3000 Ciss 2000 4000 f = 1MHz V GS = 0 V
1000 Crss 0
Coss
2
0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 100µs 1ms ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
30
20
0.1
10
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7064SN3 Rev C1 (W)
FDS7064SN3
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7064SN3.
Figure 12. FDS7064SN3 SyncFET body diode reverse recovery characteristic.
0.04A/div
12.5 nS/div
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1
TA = 125oC
IDSS, REVERSE LEAKAGE CURRENT (A)
0.01
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V)
Figure 13. SyncFET body diode reverse leakage versus drain-source voltage and temperature
FDS7064SN3 Rev C1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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