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Part: FDS7066N3
Category:
Description: FDS7066N3 - 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7066N3 datasheet File size : 117 kB
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FDS7066N3
May 2003
FDS7066N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 23 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V RDS(ON) = 6.5 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching · FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· Synchronous rectifier · DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W °C
23 60 3.0 1.7 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7066N3
2002 Fairchild Semiconductor Corporation
Device FDS7066N3
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS7066N3 Rev B1 (W)
FDS7066N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = 16 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, VDS = 10 V, ID = 23 A ID = 21 A ID = 23 A, TJ = 125°C V DS = 5 V ID = 23 A
Min
30
Typ
Max Units
V
Off Characteristics
24 1 100 100 mV/°C µA nA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
1
1.5 4.3 4.4 5.2 6.0
3
V mV/°C
5.5 6.5 8.0
m
ID(on) gF S Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD
30 116
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
4973 826 341
pF pF pF
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
12 8 85 25
22 16 136 40 69
ns ns ns ns nC nC nC
VDS = 15 V, ID = 23 A, VGS = 5.0 V
43 13 11
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage 2.5
(Note 2)
A V
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7066N3 Rev B1 (W)
FDS7066N3
Typical Characteristics
60 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5V 4.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2
3.5V
2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.5V 4.0V 4.5V 6.0V 10V VGS = 3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.014 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 23A VGS = 10V
ID = 11.5A 0.012 0.01 0.008 TA = 125oC 0.006 0.004 0.002 0 125 150 175 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC
Figure 3. On-Resistance Variation withTemperature.
60
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5.0V 50 ID, DRAIN CURRENT (A) 40 30 20 25oC 10 -55oC 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0V
10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC
TA = 125oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7066N3 Rev B1 (W)
FDS7066N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 23A 8 VDS = 5V 15V 10V
6400 5600 CAPACITANCE (pF) 4800 4000 3200 2400 1600 800 CO S S CRSS 0 6 12 18 24 30 CI S S f = 1 MHz VGS = 0 V
6
4
2
0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC)
0 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms 1s DC P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
30
1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1
20
0.1
10
10
100
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02
0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7066N3 Rev B1 (W)
FDS7066N3
Dimensional Outline and Pad Layout
FDS7066N3 Rev B1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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