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Part: FDS7066SN3
Category:
Description: FDS7066SN3 - 30V N-channel Powertrench SyncFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7066SN3 datasheet File size : 117 kB
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FDS7066SN3
May 2003
FDS7066SN3
30V N-Channel PowerTrench SyncFETTM
General Description
The FDS7066SN3 is designed to replace a single SO-8 FLMP MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7066SN3 includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology. The performance of the FDS7066SN3 as the low-side switch in a synchronous rectifier is close to the performance of the FDS7066N3 in parallel with a Schottky diode.
Features
· 19 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V RDS(ON) = 6.0 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching · FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· DC/DC converter · Motor drivesFeatures
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W °C
19 60 3.0 1.7 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7066SN3
2002 Fairchild Semiconductor Corporation
Device FDS7066SN3
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS7066SN3 Rev C1 (W)
FDS7066SN3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, VDS = 10 V, ID = 19 A ID = 17.5 A ID = 19 A, TJ = 125°C V DS = 5 V ID = 19 A
Min
30
Typ
Max Units
V
Off Characteristics
25 500 ±100 1 1.4 3 4.5 5.0 30 40 98 5.5 6.0 8.0 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
V mV/°C m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tR R QRR
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
4740 825 300 1.4
pF pF pF 22 22 136 51 57 ns ns ns ns nC nC nC
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
12 12 85 32
VDS = 15 V, ID = 19 A, VGS = 5.0 V
41 10 10
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Schottky Diode Forward Current DrainSource Schottky Diode (Note 2) VGS = 0 V, IS = 4.3 A Forward Voltage IF = 19 A Reverse Recovery Time diF/dt = 300 A/us Reverse Recovery Charge 4.3 0.4 26.6 28 0.7 A V ns nC
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7066SN3 Rev C1 (W)
FDS7066SN3
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 2.0V 0 0 0.25 0.5 0.75 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 3.0V 2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.0V 3.5V 4.0V 4.5V 6.0V 10V VGS = 2.5V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.016 RDS(ON), ON-RESISTANCE (OHM)
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 19A VGS = 10V 1.3
ID = 9.5A 0.012
1.1
TA = 125oC 0.008
0.9
TA = 25oC 0.004 2 4 6 8 10
0.7 -50 -25 0 25 50 75
o
100
125
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) TA = 125oC IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01
-55oC
25oC
0.001
0.0001 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7066SN3 Rev C1 (W)
FDS7066SN3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 19A 8 VDS = 10V 15V 6 20V 4 4500 6000 f = 1 MHz V GS = 0 V Ciss
CAPACITANCE (pF)
3000
2
1500
Coss
0 0 10 20 30 40 50 60 70 80 Qg, GATE CHARGE (nC)
Crss 0 0 6 12 18 24 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 100µs 1ms ID, DRAIN CURRENT (A) 10 1s 1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10ms 100ms P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
30
20
0.1
10
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7066SN3 Rev C1 (W)
FDS7066SN3
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7066SN3. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1
IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125 C
0.01
o
TA = 100oC
0.001
0.08A/div
0.0001
TA = 25oC
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
12.5 nS/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature
Figure 12. FDS7066SN3 SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7066N3).
0.08A/div
12.5 nS/div
Figure 13. Non-SyncFET (FDS7066N3) body diode reverse recovery characteristic.
FDS7066SN3 Rev C1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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