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Part: FDS7082N3
Category:
Description: 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7082N3 datasheet File size : 117 kB
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FDS7082N3
February 2004
FDS7082N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
Features
· 17.5 A, 30 V RDS(ON) = 6 m @ VGS = 10 V RDS(ON) = 8 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · Low Qg and Rg for fast switching · FLMP SO-8 package for enhanced thermal performance in an industry-standard package outline.
Applications
· Secondary side Synchronous rectifier · Synchronous Buck VRM and POL Converters
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W °C
17.5 60 3.0 1.5 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7082N3 Device FDS7082N3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS7082N3 Rev D1 (W)
FDS7082N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 17.5 A VGS = 4.5 V, ID = 15.5 A VGS = 10 V, ID = 17.5 A,TJ = 125°C VDS = 10 V, ID = 17.5 A
Min
30
Typ
Max Units
V
Off Characteristics
24 10 ± 100 1 2 4.3 4.9 6.5 5.0 116 6.0 8.0 8.0 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance
V mV/°C m
gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qg Qgs Qgd IS VSD tr r Qrr
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz
2271 554 213 1.4
pF pF pF 20 37 64 32 53 31 ns ns ns ns nC nC nC nC
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
14 12 38 18
VDS = 15 V, ID = 17.5 A, VGS =10 V VDS = 15 V, ID = 17.5 A, VGS = 5 V
43 22 6.8 6.9
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 17.5 A, Diode Reverse Recovery Time diF/dt = 100 A/µs Diode Reverse Recovery Charge 2.5
(Note 2)
A V nS nC
0.7 31 21
1.2
FDS7082N3 Rev D1 (W)
FDS7082N3
Electrical Characteristics
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7082N3 Rev D1 (W)
FDS7082N3
Typical Characteristics
60
3 VGS = 10V 4.5V 4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
1.5
VGS = 3.5V
ID, DRAIN CURRENT (A)
6.0V
40
3.5V
20
4.0V 4.5V 5.0V 6.0V 10V 0 10 20 30 40 ID, DRAIN CURRENT (A) 50 60
0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V)
3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.022 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 17.5A VGS = 10V
ID = 8.75A
1.4
0.018
1.2
0.014
TA = 125oC
1
0.01
TA = 25oC
0.8
0.006
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0.002 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation withTemperature.
60
VDS = 5V IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC
50 ID, DRAIN CURRENT (A) 40 30 20 10 0 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
TA =125oC 25oC -55oC
0
0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7082N3 Rev D1 (W)
FDS7082N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 17.5A 8
3000 2500 CAPACITANCE (pF) VDS = 5V 10V 2000 1500 1000 500 f = 1MHz VGS = 0 V
Ciss
6 15V 4
Coss
2
Crss
0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
1 0 00
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT
ID , D R A I N C U R R E N T (A )
1 00
1ms 10ms 100ms 1s VGS = 10V SINGLE PULSE RJA = 85 C/W TA = 25 C
o o
100µs
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
10
10s DC
30
1
20
0.1
10
0.01 0.01
0.1
1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.01
0.1
1 10 t1, TIME (sec)
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1.00
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.10
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 85 °C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.00 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7082N3 Rev D1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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