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Part: FDS7088N3
Category:
Description: FDS7088N3 - 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7088N3 datasheet File size : 117 kB
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FDS7088N3
May 2003
FDS7088N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V RDS(ON) = 5 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching · FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· Synchronous rectifier · DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V A W °C
21 60 3.0 1.5 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS7088N3
2002 Fairchild Semiconductor Corporation
Device FDS7088N3
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS7088N3 Rev C1 (W)
FDS7088N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
ID = 250 µA VGS = 0 V, ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VG S = 0 V V DS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
25 10 ±100 1 1.9 6 3.0 3.7 4.4 30 112 3845 930 368 VGS = 15 mV,
(Note 2)
mV/°C µA nA V mV/°C 4 5 5.5 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 21 A ID = 19 A VGS = 4.5 V, VGS = 10 V, ID = 21 A, TJ = 125°C VGS = 10 V, V DS = 5 V VDS = 10 V, VDS = 15 V, f = 1.0 MHz ID = 21 A V GS = 0 V,
3
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD tr r Qrr
A S pF pF pF 27 23 99 58 48 ns ns ns ns nC nC nC 2.5 A V nS nC
Dynamic Characteristics
f = 1.0 MHz ID = 1 A, RGEN = 6
1.4 15 13 62 36
Switching Characteristics
VDD = 15 V, VGS = 10 V,
VDS = 15 V, VGS = 5.0 V
ID = 21 A,
37 10 14
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage Diode Reverse Recovery Time IF = 21 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge
(Note 2)
0.7 39 33
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when 2 mounted on a 1in pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7088N3 Rev C1 (W)
FDS7088N3
Typical Characteristics
80
VGS = 10V 4.5V
2.2
4.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
VGS = 3.5V
2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80
ID, DRAIN CURRENT (A)
60
40
4.0V 4.5V 5.0V 6.0V 10V
20
3.0V
0 0 0.5 1 1 .5 VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.01 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 21A VGS = 10V
ID = 10.5A 0.008
1.4
1.2
0.006
TA = 125oC
1
0.004 TA = 25oC 0.002
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
80 VDS = 5V ID, DRAIN CURRENT (A) 60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
10
TA = 125oC
1 0.1 0.01 0.001 0.0001
25oC -55oC
40
TA =125oC 25oC
20 -55oC 0 2 2 .5 3 3 .5 4 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7088N3 Rev C1 (W)
FDS7088N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 21A 8 20V 6 CAPACITANCE (pF) VDS = 10V 15V
5000
f = 1MHz VG S = 0 V CISS
4000
3000
4
2000 C O SS 1000 CRSS
2
0 0 20 40 Qg, GATE CHARGE (nC) 60 80
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC
100µs
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
10
30
1
0.1
VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC
20
10
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1.00
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2
0.10
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 85 °C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.01
0.01
SINGLE PULSE
0.00 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7088N3 Rev C1 (W)
FDS7088N3
Dimensional Outline and Pad Layout
FDS7088N3 Rev C1 (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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