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Part: FDS7096N3
Category:
Description: FDS7096N3 - 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7096N3 datasheet File size : 117 kB
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FDS7096N3
March 2003
FDS7096N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
· 14 A, 30 V RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching · Bottomless SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
· · · DC/DC converter Power management Load switch
N DC NC
N DC N DC
D
5 6
Bottom-side Drain Contact
4 3 2 1
D
B ott om less SO- 8
Pin 1 S O- 8
G SG S S SS S
TA=25oC unless otherwise noted
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W °C
14 60 3.0 1.5 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W
Package Marking and Ordering Information
Device Marking FDS7096N3
2003 Fairchild Semiconductor Corporation
Device FDS7096N3
Reel Size 13''
Tape width 12mm
Quantity 2500 units
FDS7096N3 Rev C(W)
FDS7096N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VG S = 0 V V DS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
27 10 ±100 1 1.9 6 7.5 9.5 11 30 62 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 14 A ID = 13 A VGS = 4.5 V, VGS = 10 V, ID = 14 A,TJ = 125°C VGS = 10 V, V DS = 5 V VDS = 10 V, ID = 14 A
V mV/°C
9 12 14
m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS tR R QRR VSD
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1587 385 154 1.4
pF pF pF 20 23 43 27 22 ns ns ns ns nC nC nC
VGS = 15 mV, f = 1.0 MHz VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
11 13 27 15
VDS = 15 V, VGS = 5.0 V
ID = 14 A,
16 5 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current Reverse Recovery Time Reverse Recovery Charge DrainSource Diode Forward Voltage IF = 14 A, diF/dt = 100 A/µs VGS = 0 V, IS = 2.5 A 16
(Note 2) (Note 2)
2.5 26 0.7 1.2
A ns nC V
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7096N3 Rev C(W)
FDS7096N3
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0
6.0V
3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V
4.5V
2 1.8 VGS = 3.5V 1.6 1.4 1.2 1 0.8
4.0V 4.5V 5.0V 6.0V 10V
3.0V
0.5
1
1.5
2
2. 5
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.022 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 14A VGS = 10V
ID = 7A
0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
1.4
1.2
TA = 125oC
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
70 60 ID, DRAIN CURRENT (A) 50 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001
VDS = 5V
TA =125oC
30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
25oC
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7096N3 Rev C(W)
FDS7096N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
2400 ID = 14A VDS = 10V 15V CAPACITANCE (pF) 2000 CISS 1600 1200 COSS 800 400 CRSS 0
0 5 10 15 20 25 30
f = 1MHz VGS = 0 V
8
20V
6
4
2
0 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
ID, DRAIN CURRENT (A)
100 RDS(ON) LIMIT 10 1ms 10ms 100ms 1s 10s DC
100µs
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
30
1 VGS = 10V SINGLE PULSE RJA = 85oC/W TA = 25oC 0.01 0.01 0.1 1
20
0.1
10
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 85 °C/W P(pk ) t1 t2 T J - T A = P * R J A ( t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02
0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7096N3 Rev C(W)
FDS7096N3
Dimensional Outline and Pad Layout
FDS7096N3 Rev C(W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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