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Details, datasheet, quote on part number:FDS7288N3
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Datasheet text preview:
FDS7288N3
February 2004
FDS7288N3
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET in the thermally enhanced SO8 FLMP package has been designed specifically to improve the overall efficiency of DC/DC converters. Providing a balance of low RDS(ON) and Qg it is ideal for synchronous rectifier applications in both isolated and non-isolated topologies. It is also well suited for both high and low side switch applications in Point of Load converters.
Features
· 20.5 A, 30 V RDS(ON) = 4.5 m @ VGS = 10 V RDS(ON) = 5.6 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · Low Qg and Rg for fast switching · SO-8 FLMP for enhanced thermal performance in an industry-standard package outline.
Applications
· Secondary side Synchronous rectifier · Synchronous Buck VRM and POL Converters
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W °C
20 60 3.0 1.5 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
40 0.5
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7288N3 Device FDS7288N3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS7288N3 Rev C1 (W)
FDS7288N3
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ± 20 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 20.5 A VGS = 4.5 V, ID = 18.5 A VGS = 10 V, ID = 20.5 A,TJ = 125°C VDS = 10 V, ID = 20.5 A VDS = 15 V, V GS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz
Min
30
Typ
Max Units
V
Off Characteristics
25 10 ± 100 1 1.8 5 3.8 4.6 5.2 106 3300 845 230 1.6 12 11 45 32 VDS = 15 V, ID = 20.5 A, VGS =10 V VDS = 15 V, ID = 20.5 A, VGS = 5 V 49 26 8.8 6.7 22 20 72 51 69 36 4.5 5.6 7.6 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance Forward Transconductance
V mV/°C m
gF S
S pF pF pF ns ns ns ns nC nC nC nC
Dynamic Characteristics Ciss Input Capacitance Coss Crss RG Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2)
Switching Characteristics td(on) TurnOn Delay Time tr td(off) tf Qg Qg Qgs Qgd IS VSD tr r Qrr TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 20.5 A, Diode Reverse Recovery Time diF/dt = 100 A/µs Diode Reverse Recovery Charge 2.5
(Note 2)
A V nS nC
0.70 36 25
1.2
FDS7288N3 Rev C1 (W)
FDS7288N3
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40°C/W when mounted on a 1in2 pad of 2 oz copper
b)
85°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7288N3 Rev C1 (W)
FDS7288N3
Typical Characteristics
60
VGS =10V 6.0V
2.6 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8
1
VGS = 3.0V
50 ID, DRAIN CURRENT (A)
4.0V 4.5V
40
30
3.0V
3.5V 4.0V 4.5V 5.0V 6.0V 10V
20
10
0 0 0 .2
2.5V
0.4 0.6 0.8 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20 30 40 ID, DRAIN CURRENT (A)
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.018
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 20.5A VGS = 10V
ID = 10.25A
RDS(ON), ON-RESISTANCE (OHM) 0.014
1.4
1.2
0.01
1
TA = 125oC
0.006
0.8
TA = 25 C
0.002
o
0.6 - 50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 15 0
2
4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 3. On-Resistance Variation withTemperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VGS = 0V
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
50 ID, DRAIN CURRENT (A)
10 1 0.1 0.01 0 .0 0 1 0.0001
TA = 125 C
o
40
30
TA =125 C 25 C -55 C
o o
o
25 C
o
20
-55 C
o
10
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4
0
0 .2 0.4 0 .6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7288N3 Rev C1 (W)
FDS7288N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 20.5A 8 VDS = 10V CAPACITANCE (pF) 20V
4000 f = 1MHz VGS = 0 V 3000 Ciss
6
2000 Coss 1000 Crss 0
4
15V
2
0 0 10 20 30 40 Qg, GATE CHARGE (nC) 50 60
0
5
10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 7. Gate Charge Characteristics.
100 0 P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
10 0 ID, DRAIN CURRENT (A)
RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC VGS = 10V SINGLE PULSE o RJA = 85 C/W TA = 25oC
100µs
40
SINGLE PULSE RJA = 85°C/W TA = 25°C
10
30
1
20
0 .1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
10 0
0 0.01
0.1
1 10 t1, TIME (sec)
10 0
10 00
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r (t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 85 °C/W
0.1
0.1 0.05 0.02 0.01
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS7288N3 Rev C1 (W)
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