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Part: FDS7760A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: N-channel Logic Level PowerTrench® MOSFET Preliminary
Company: Fairchild Semiconductor
Datasheet: Download FDS7760A datasheet File size : 117 kB
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FDS7760A
January 2002
FDS7760A
N-Channel Logic Level PowerTrench® MOSFET
General Description
This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
· 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 V RDS(ON) = 8 m @ VGS = 4.5 V. · Low gate charge (37nC typical) · Fast switching speed. · High performance trench technology for extremely low RDS(ON) . · High power and current handling capability.
Applications
· DC/DC converter · Load switch · Motor drives
D D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
30 ±20
(Note 1a)
Units
V V A W
15 60 2.5 1.2 1 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJA R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 50 (10 sec) 30
°C/W °C/W °C/W Quantity 2500 units
FDS7760A Rev D (W)
Package Outlines and Ordering Information
Device Marking FDS7760A
©2002 Fairchild Semiconductor Corporation
Device FDS7760A
Reel Size 13''
Tape Width 12mm
FDS7760A
DMOS Electrical Characteristics
Symbol
W DSS IAR
TA = 25°C unless otherwise noted
Parameter
Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VDD = 15 V, ID = 15 A
Min
Typ
Max Units
360 15 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = 20 V VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 10 V, ID = 15 A ID = 15 A, TJ = 125°C ID = 13 A VDS = 5 V ID = 15 A 30 24 1 100 100 V mV/°C µA nA nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
1
1.6 -5 4.5 7 6
3
V mV/°C
5.5 8 8
m
ID(on) gFS
50 65
A S
Dynamic Characteristics
Ci s s C oss Cr s s Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
3514 1123 307
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
13 12 78 32
20 19 125 51 55
ns ns ns ns nC nC nC
VDS = 15 V, ID = 15 A, VGS = 5 V
37 10 12
DrainSource Diode Characteristics and Maximum Ratings
IS VSD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 2.1 A
(Note 2)
2.1 0.7 1.2
A V
a) 50°/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°/W when mounted on a minimum pad.
2. Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7760A Rev D (W)
FDS7760A
Typical Characteristics
60 VGS = 10V 50 ID, DRAIN CURRENT (A) 5.0 40 30 20 2.5V 10 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 4.0V 3.5V 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
VGS = 4.0V 4.5V 5.0V 6.0V 7.0V 10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 9A VGS = 10V
ID = 7.5 A
1.4
0.015
1.2
0.01
1
TA = 125oC
0.8
0.005 TA = 25 C 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
o
0.6 -50
-25
0
25
50
75
100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
80 VDS = 5V 70 ID, DRAIN CURRENT (A) 60 50 40 30 20 10 0 1 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 I S, REVERSE DRAIN CURRENT (A)
TA = -55 C
o
25 C 125 C
o
o
VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25o C -55 C
o
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7760A Rev D (W)
FDS7760A
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 7.5A 8 VDS = 5V 15V
6000 5000 CAPACITANCE (pF) 10V 4000 3000 2000 COSS 1000 CRSS 0 0 10 20 30 40 50 60 0 5 10 15 20 CISS
f = 1MHz VGS = 0 V
6
4
2
0 Qg, GATE CHARGE (nC)
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE o RJA = 125 C/W TA = 25 C 0.01 0.01
o
Figure 8. Capacitance Characteristics.
50
100µs 1ms
P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
1
20
10
0.1
1
10
100
0 0.01
0.1
1 t1, TIME (sec)
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) + R JA RJA = 125 °C/W P(pk) t1 t2
SINGLE PULSE
0.1
0.1 0.05 0.02 0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7760A Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLT TM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST ® FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench ® QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER ®
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET ®
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS D e f i n i t i o n of Terms D a t a s h e e t Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4
Others parts begin by fd
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