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Part: FDS7764A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N-Channel
Description: 30V N-channel PowerTrench® MOSFET Preliminary
Company: Fairchild Semiconductor
Datasheet: Download FDS7764A datasheet File size : 117 kB
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Datasheet text preview:
FDS7764A
March 2003
FDS7764A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 15 A, 30 V. RDS(ON) = 7.5 m @ VGS = 4.5 V
· High performance trench technology for extremely low RDS(ON). High power and current handling capability
Applications
· Synchronous rectifier · DC/DC converter
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±12
(Note 1a)
Units
V V A W
15 50 2.5 1.2 1.0 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7764A Device FDS7764A Reel Size 13'' Tape width 12mm Quantity 2500 units
2003 Fairchild Semiconductor Corporation
FDS7764A Rev E (W)
FDS7764A
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF I G SSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS V SD
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, VGS = 4.5 V, VGS = 10 V, VGS = 4.5 V, VDS = 10 V, ID = 15 A ID = 15 A, TJ = 125°C ID = 15.5 A VDS = 5 V ID = 15 A
Min
30
Typ
Max Units
V
Off Characteristics
23 1 100 100 0.8 1.1 4 6.5 9.3 6.0 25 97 3451 520 202 VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 16 13 52 20 VDS = 15 V, ID = 15 A, VGS = 4.5 V 29 6.7 7 2.1
(Note 2)
mV/°C µA nA nA V mV/°C 7.5 13 m A S pF pF pF 28 23 82 36 40 ns ns ns ns nC nC nC A V
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
2.0
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.1 A Voltage 0.7 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when 2 mounted on a 1in pad of 2 oz copper
b) 105°C/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7764A Rev E (W)
FDS7764A
Typical Characteristics
50 3.5V 3.0V 2.5V 30
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V ID, DRAIN CURRENT (A) 40
1.6
1.4
VGS = 2.5V
1.2
20 2.0V 10
3.0V 3.5V 4.0V 4.5V
1
0 0 0.5 1 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8 0 10 20 30 40 50 I D, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 15.5A VGS = 10V
ID = 7.8A
0.0175 0.015 0.0125
TA = 125oC
0.01 0.0075
TA = 25oC
0.005 0 2 4 6 8 10
125
150
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
90 75 ID, DRAIN CURRENT (A) 60 45 30 15 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) IS, REVERSE DRAIN CURRENT (A) VDS = 5V TA = -55oC 25oC 125oC
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC -55oC
VGS = 0V
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7764A Rev E (W)
FDS7764A
Typical Characteristics
5 VGS, GATE-SOURCE VOLTAGE (V) ID = 15 A 4 VDS = 5V 15V
CAPACITANCE (pF)
5000
10V
4000
f = 1 MHz VGS = 0 V CISS
3000
3
2
2000
1
COSS
1000
CRSS 0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10s 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.01 DC 1ms 10ms 100ms 1s P(pk), PEAK TRANSIENT POWER (W) 100µs 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
20
0.1
10
0.1
1
10
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125oC/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7764A Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2
Others parts begin by fd
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