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Details, datasheet, quote on part number:FDS7766
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Datasheet text preview:
FDS7766
March 2003
FDS7766
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 17 A, 30 V RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V
· High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching
Applications
· Synchronous rectifier · DC/DC converter
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W
17 60 2.5 1.2 1.0 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7766 Device FDS7766 Reel Size 13'' Tape width 12mm Quantity 2500 units
2003 Fairchild Semiconductor Corporation
FDS7766 Rev E (W)
FDS7766
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF I G SSR VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = 16 V, VDS = 0 V VGS = 16 V, VDS = 0 V VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, ID = 17 A ID = 15.5 A ID = 17 A, TJ = 125°C VDS = 5 V
Min
30
Typ
Max Units
V
Off Characteristics
24 1 100 100 1 1.5 4.3 4.2 4.7 5.7 30 116 4973 826 341 VGS = 15 mV, f = 1.0 MHz
(Note 2)
mV/°C µA nA nA V mV/°C 5.0 6.0 7.2 m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
3
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS V SD
A S pF pF pF 22 16 136 40 69 ns ns ns ns nC nC nC 2.5 A V
VDS = 10 V, ID = 17 A
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
1.2 12 8 85 25
Switching Characteristics
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 17 A, VGS = 5.0 V
43 13 11
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.5 A Voltage
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7766 Rev E (W)
FDS7766
Typical Characteristics
60 VGS = 10V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.25 0.5 0.75 1 1.25 VDS, DRAIN TO SOURCE VOLTAGE (V) 2.5V 4.5V 3.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2
3.5V
2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DIRAIN CURRENT (A) 3.5V 4.0V 4.5V 6.0V 10V VGS = 3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0. 014 ID = 8.5A RDS(ON), ON-RESISTANCE (OHM)
1. 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1. 6 1. 4 1. 2 1 0. 8 0.6 -50 - 25 0 25 50 75 100
o
ID = 17A VGS = 10V
0. 012 0. 01 0. 008 TA = 125oC 0. 006 0. 004 0. 002 0 TA = 25oC
125
150
175
2
4
6
8
10
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
60
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5.0V 50 ID, DRAIN CURRENT (A) 40 30 20 25oC 10 -55oC 0 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
VGS = 0V
10 1 0. 1 0. 01 0. 001 0.0001 0 0.2 0.4 0.6 0. 8 1 1. 2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25 o C -55o C
TA = 125oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7766 Rev E (W)
FDS7766
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 17A 8 VDS = 5V 15V 10V
6400 5600 CAPACITANCE (pF) 4800 4000 3200 2400 1600 800 COSS C R SS 0 6 12 18 24 30 CISS f = 1 MHz VG S = 0 V
6
4
2
0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC)
0 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) 100 µ s ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1m s 10m s 100m s 1s 1 DC 0. 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
20
10
0 0.001
0. 01
0. 1
1
10
100
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W
0.02 0.01
o
0.1
0.1 0. 05
P(pk ) t1 t2
0.01
SINGLE PULSE
T J - T A = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7766 Rev E (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2
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