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Part: FDS7766S
Category:
Description: 30V N-channel Powertrench MOSFET
Company: Fairchild Semiconductor
Datasheet: Download FDS7766S datasheet File size : 117 kB
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FDS7766S
June 2003
FDS7766S
30V N-Channel PowerTrench® MOSFET
General Description
The FDS7766S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS7766S includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
Features
· 17 A, 30 V RDS(ON) = 5.5 m @ VGS = 10 V RDS(ON) = 6.5 m @ VGS = 4.5 V
· High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching
Applications
· Synchronous rectifier · DC/DC converter
D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W
17 60 2.5 1.2 1.0 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7766S Device FDS7766S Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS7766S Rev C (W)
FDS7766S
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS I GSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 15 mA, Referenced to 25°C VDS = 24 V, VGS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1 mA ID = 15 mA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VGS = 10 V, ID = 17 A ID = 15.5 A ID = 17 A, TJ = 125°C VDS = 5 V
Min
30
Typ
Max Units
V
Off Characteristics
23 500 ±100 1 1.3 2 4.0 4.6 5.7 30 91 4785 825 290 VGS = 15 mV, f = 1.0 MHz
(Note 2)
mV/°C µA nA V mV/°C 5.5 6.5 7.2 m A S pF pF pF 22 22 132 49 58 ns ns ns ns nC nC nC 3.5 A V ns nC
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
3
ID(on) gFS Ciss Coss Crss RG td(on) tr t d(off) tf Qg Qgs Qgd IS VSD t rr Qrr
Notes:
VDS = 10 V, ID = 17 A
Dynamic Characteristics
VDS = 15 V, V GS = 0 V, f = 1.0 MHz
1.3 12 12 82 30
Switching Characteristics
VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6
VDS = 15 V, ID = 17 A, V GS = 5 V
41 11 9
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 3.5 A Voltage Schottky Diode Reverse Recovery IF = 17 A, diF/dt = 300 A/µs
(Note 2)
0.4 27 28
0.7
(Note 2)
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size pape 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics
60
VGS = 10V 3.0V 4.5V 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 3.0V 1.4 3.5V 1.2 1 0.8 4.5V 6.0V 10V 2 VGS = 2.5V
50 ID, DRAIN CURRENT (A)
6.0V
40 30 20 10
2.0V
0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 1.5
0
10
20 30 40 ID, DRAIN CURRENT (A)
50
60
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.02 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 17A VGS =10V
ID = 8.5A 0.016
1.4
1.2
0.012 TA = 125oC
1
0.008
0.8
0.004
TA = 25oC
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0 1 2 3 4 5 6 7 8 VGS, GATE TO SOURCE VOLTAGE (V) 9 10
Figure 3. On-Resistance Variation withTemperature.
50
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V
ID, DRAIN CURRENT (A)
40
10
30
TA = 125oC
1
TA = 125oC 25oC
20
25oC -55 C
o
10
0.1 -55oC 0.01
0 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) 3
0
0.1 0.2 0.3 0.4 0.5 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V)
0.7
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 17A 8 5000 VDS = 10V CAPACITANCE (pF) 4000 3000 2000 Coss 1000 0 0 20 40 Qg, GATE CHARGE (nC) 60 80 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Crss 20V 15V Ciss 6000 f = 1MHz VGS = 0 V
6
4
2
0
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
100us 1ms 10ms 100ms 1s
ID, DRAIN CURRENT (A)
10
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
1
10s DC VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC
20
0.1
10
0.01 0.01
0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V)
100
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 °C/W
0.1
0.1 0.05
P(pk
0.01
0.02 0.01
SINGLE PULSE
t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7766S Rev C (W)
FDS7766S
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS7766S. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1
IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125oC
0.01
TA = 100oC
0.001
0.0001
0.8A/div
TA = 25oC
0.00001 0 10 20 30 VDS, REVERSE VOLTAGE (V)
12.5 nS/div
Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS7766).
0.8A/div
12.5 nS/div
Figure 13. Non-SyncFET (FDS7766) body diode reverse recovery characteristic.
0.08A/
Figure 12. FDS7766S SyncFET body diode reverse recovery characteristic.
FDS7766S Rev C (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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