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Details, datasheet, quote on part number:FDS7788
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Datasheet text preview:
FDS7788
March 2003
FDS7788
30V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
· 18 A, 30 V. RDS(ON) = 4.0 m @ V GS = 10 V RDS(ON) = 5.0 m @ V GS = 4.5 V · Low gate charge · Fast switching speed · High power and current handling capability · High performance trench technology for extremely low RDS(ON)
Applications
· DC/DC converter · Load switch · Motor drives
D
D
D
D
5 6 4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
T A=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W
18 50 2.5 1.2 1.0 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ , TS T G
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R J A R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7788 Device FDS7788 Reel Size 13'' Tape width 12mm Quantity 2500 units
©2003 Fairchild Semiconductor Corporation
FDS7788 Rev D (W)
FDS7788
Electrical Characteristics
Symbol
BV DSS BVDSS TJ IDSS IGSSF IGSSR V GS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
V GS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C V DS = 24 V, V GS = 0 V V GS = 16 V, V DS = 0 V V GS = 16 V, V DS = 0 V V DS = V GS , ID = 250 µA ID = 250 µA, Referenced to 25°C V GS = 10 V, ID = 18 A V GS = 4.5 V, ID = 17 A V GS = 10 V, ID = 18 A, TJ = 125°C V GS = 10 V, V DS = 5 V V DS = 10 V, ID = 18 A
Min
30
Typ
Max Units
V mV/°C 10 100 100 µA nA nA V mV/°C m
Off Characteristics
25
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
1
1.9 5.4 3.0 3.8 4.3
3
4.0 5.0 6.3
ID(on) gFS
30 112
A S
Dynamic Characteristics
Ci s s Co s s Crss RG td(on) tr td(off) tf Qg Qgs Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V DS = 15 V, f = 1.0 MHz V GS = 15 mV,
V GS = 0 V,
3845 930 368
pF pF pF 27 23 99 58 48 ns ns ns ns nC nC nC
f = 1.0 MHz
1.4 15 13 62 36
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
V DD = 15 V, ID = 1 A, V GS = 10 V, RGEN = 6
V DS = 15 V, V GS = 5.0 V
ID = 18 A,
37 10 14
DrainSource Diode Characteristics and Maximum Ratings
V SD trr Qrr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while R CA is determined by the user's board design.
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
V GS = 0 V,
IS = 2.1 A
(Note 2)
0.7 39 33
1.2
V nS nC
IF = 18 A, di F/dt = 100 A/µs
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7788 Rev D (W)
FDS7788
Typical Characteristics
80
V GS = 10V 4.5V
2.2
4.0V
R DS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
3.5V
V GS = 3.5V
2 1.8 1.6 1.4 1.2 1 0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80
ID, DRAIN CURRENT (A)
60
40
4.0V 4.5V 5.0V 6.0V 10V
20
3.0V
0 0 0.5 1 1.5 VD S, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.01 RDS(ON) , ON-RESISTANCE (OHM)
1.6 R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 18A V GS = 10V
ID = 9A 0.008
1.4
1.2
0.006 TA = 125 oC 0.004 T A = 25o C 0.002
1
0.8
0.6 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE ( oC )
0 2 4 6 8 10 V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
80
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS , REVERSE DRAIN CURRENT (A)
V GS = 0V
V D S = 5V ID , DRAIN CURRENT (A) 60
10
T A = 125o C
1 0.1 0.01 0.001 0.0001
25o C -55 C
o
40
T A =125o C 25o C
20 -55 C 0 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V)
o
0
0.2
0.4
0.6
0.8
1
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7788 Rev D (W)
FDS7788
Typical Characteristics
10 V GS , GATE-SOURCE VOLTAGE (V) ID = 18A 8 20V 6 VD S = 10V 15V
5000
f = 1MHz VGS = 0 V CISS
4000 CAPACITANCE (pF)
3000
4
2000 COSS 1000 CR S S 0 5 10 15 20 25 30
2
0 0 20 40 Q g, GATE CHARGE (nC) 60 80
0
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID , DRAIN CURRENT (A) 10 10s 1 VGS = 10V SINGLE PULSE RJA = 125 C / W TA = 25 C 0.01 0.01 0.1 1 10 100 VD S, DRAIN-SOURCE VOLTAGE (V)
o o
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE R JA = 125°C/W T A = 25°C
100µs 1ms 10ms 100ms 1s DC
40
30
20
0.1
10
0 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * R JA R JA = 125 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02 0.01
0.01
T J - T A = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS7788 Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2
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