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Details, datasheet, quote on part number:FDS7796
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Datasheet text preview:
FDS7796
March 2003
FDS7796
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
· 13 A, 30 V RDS(ON) = 9 m @ VGS = 10 V RDS(ON) = 12 m @ VGS = 4.5 V · High performance trench technology for extremely low RDS(ON) · High power and current handling capability · Fast switching
Applications
· · · DC/DC converter Power management Load switch
D
D
D
D
5 6
4 3 2 1
SO-8
S
S
S
G
7 8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
30 ±16
(Note 1a)
Units
V V A W
13 50 2.5 1.2 1.0 55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
50 30
°C/W °C/W
Package Marking and Ordering Information
Device Marking FDS7796 Device FDS7796 Reel Size 13'' Tape width 12mm Quantity 2500 units
2003 Fairchild Semiconductor Corporation
FDS7796 Rev C(W)
FDS7796
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±16 V, VG S = 0 V V DS = 0 V
Min
30
Typ
Max Units
V
Off Characteristics
27 10 ±100 1 1.9 6 7.1 9.1 11 25 61 3 mV/°C µA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 13 A ID = 12 A VGS = 4.5 V, VGS = 10 V, ID = 13 A,TJ = 125°C VGS = 10 V, V DS = 5 V VDS = 10 V, ID = 13 A
V mV/°C
9 12 14
m
ID(on) gF S Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd tR R QRR IS VSD
A S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = 15 V, f = 1.0 MHz
V GS = 0 V,
1587 385 154 1.4
pF pF pF 20 23 43 27 22 ns ns ns ns nC nC nC ns nC 2.1 A V
VGS = 15 mV, f = 1.0 MHz VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
11 13 27 15
VDS = 15 V, VGS = 5.0 V
ID = 13 A,
16 5 6
DrainSource Diode Characteristics and Maximum Ratings
Reverse Recovery Time Reverse Recovery Charge IF = 13 A, diF/dt = 100 A/µs 16
(Note 2)
26
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 2.1 A Voltage
(Note 2)
0.7
1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when mounted on a 1in2 pad of 2 oz copper
b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper
c) 125°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS7796
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 0 0.5 1 1.5 2 2. 5 VDS, DRAIN-SOURCE VOLTAGE (V)
6.0V
3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V
4.5V
2 1.8 VGS = 3.5V 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 ID, DRAIN CURRENT (A)
4.0V 4.5V 5.0V 6.0V 10V
3.0V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.022 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 13A VGS = 10V
ID = 6.5 A
0.02 0.018 0.016 0.014 0.012 0.01 0.008 0.006 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
1.4
1.2
TA = 125oC
1
0.8
TA = 25oC
0.6 -50 -25 0 25 50 75 100
o
125
150
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation withTemperature.
70 60 ID, DRAIN CURRENT (A) 50 40
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 TA = 125oC 0.1 25oC 0.01 -55oC 0.001 0.0001
VDS = 5V
TA =125oC
30 20 10 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V)
25oC
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS7796
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
2400 ID = 13A VDS = 10V 15V CAPACITANCE (pF) 2000 CISS 1600 1200 COSS 800 400 CRSS 0
0 5 10 15 20 25 30
f = 1MHz VGS = 0 V
8
6
20V
4
2
0 Qg, GATE CHARGE (nC)
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 10s 1 VGS = 10V SINGLE PULSE RJA = 125 C/W TA = 25 C 0.01 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V)
o o
Figure 8. Capacitance Characteristics.
50
1ms 10ms 100ms 1s DC
P(pk), PEAK TRANSIENT POWER (W)
100µs
40
SINGLE PULSE RJA = 125°C/W TA = 25°C
30
20
0.1
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 125 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
o
0.1
0.1 0.05 0.02 0.01
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ImpliedDisconnect PACMAN POP ISOPLANAR Power247 LittleFET PowerTrenchâ MicroFET QFET MicroPak QS MICROWIRE QT Optoelectronics MSX Quiet Series MSXPro RapidConfigure OCX RapidConnect OCXPro SILENT SWITCHERâ OPTOLOGICâ SMART START OPTOPLANAR
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2
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