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Part: FDS8333C
Category:
Description: FDS8333C - 30V N & P Channel Powertrench MOSFETs
Company: Fairchild Semiconductor
Datasheet: Download FDS8333C datasheet File size : 117 kB
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FDS8333C
August 2002
FDS8333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Features
· Q1 4.1 A, 30V. RDS(ON) = 80 m @ V GS = 10 V RDS(ON) = 130 m @ V GS = 4.5 V 3.4 A, 30V. RDS(ON) = 130 m @ V GS = 10 V RDS(ON) = 200 m @ V GS = 4.5 V
·
Q2
· · ·
Low gate charge High performance trench technology for extremely low RDS(ON). High power and handling capability in a widely used surface mount package.
Q2
D D1
D D1
DD2 D D2
5 6
G2 S2 G G1 S S1 S
4 3
SO-8
Pin 1 SO-8
7 8
Q1
2 1
S
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous
TA=25oC unless otherwise noted
Parameter
Q1
30 ±16
(Note 1a)
Q2
30 ±20 3.4 20 2 1.6 1 0.9 55 to +150
Units
V A
4.1 20
Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
TJ , TS T G
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R J A R J C Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W
Package Marking and Ordering Information
Device Marking FDS8333C Device FDS8333C Reel Size 7'' Tape width 12mm Quantity 2500 units
©2002 Fairchild Semiconductor Corporation
FDS8333C Rev C (W)
FDS8333C
Electrical Characteristics
Symbol Parameter Off Characteristics
BV DSS BVDSS TJ IDSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current
TA = 25°C unless otherwise noted
Test Conditions
V GS = 0 V, ID = 250 µA V GS = 0 V, ID = 250 µA ID = 250 µA,Ref. to 25°C ID = 250 µA,Ref. to 25°C V DS = 24 V, V GS = 0 V V DS = 24 V, V GS = 0 V V GS = ± 16 V, V DS = 0 V V GS = ± 20V , V DS = 0 V V DS = V GS , ID = 250 µA V DS = V GS , ID = 250 µA ID = 250 µA,Ref. To 25°C Q1 ID = 250 µA,Ref. to 25°C Q2 V GS = 10 V, ID = 4.1 A V GS = 4.5 V, ID = 3.2 A V GS = 10 V, ID = 4.1 A TJ =125°C V GS = 10 V, ID = 3.4 A V GS = 4.5 V, ID = 2.5 A V GS = 10V,ID = 3.4A, TJ =125°C V GS = 10 V, V DS = 5 V V GS = 10 V, V DS = 5 V V DS = 5 V V DS = 5 V ID = 4.1 A ID = 3.4A Q1 Q2 Q1 Q2 Q1 Q2
Min
30 30
Typ Max
Units
V 25 22 1 1 ±100 ±100 mV/°C µA nA nA V
IGSSF /IGSSR GateBody Leakage, Forward IGSSF /IGSSR GateBody Leakage, Reverse
On Characteristics
V GS(th) VGS(th) TJ RDS(on)
(Note 2)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance
Q1 Q2
1 1
1.7 1.8 4.2 3.7 67 81 103 105 167 147
3 3
mV/°C 80 130 145 130 200 220 A m
Q1
Q2
ID(on) gFS
OnState Drain Current Forward Transconductance
Q1 Q2 Q1 Q2
10 5 9 5 282 185 49 56 20 26 2.3 9.6 4.5 4.5 6 13 19 11 1.5 2 4.7 4.1 0.9 0.8 0.6 0.4 9 9 12 23 34 20 3 4 6.6 5.7
S
Dynamic Characteristics
Ci s s Co s s Crss RG Input Capacitance Output Capacitance Q1 Q2 Q1 Q2 Reverse Transfer Capacitance Q1 Q2 Gate Resistance Q1 Q2 V DS=10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V DS=10 V, V GS = 0 V, f=1.0MHz V GS = 15 mV, f=1.0MHz V GS =15 mV, f=1.0MHz pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
(Note 2)
Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2
For Q1: V DS =10 V, I DS= 1 A V GS = 4.5 V, RGEN = 6 For Q2: V DS =10 V, I DS= 1 A V GS = 4.5 V, RGEN = 6
ns ns ns ns nC nC nC
For Q1: V DS =10 V, I DS= 4.1 A V GS = 4.5 V, RGEN = 6 For Q2: V DS =10 V, I DS= 3.4 A V GS = 4.5 V,
FDS8333C Rev C (W)
FDS8333C
Electrical Characteristics
Symbol
V SD trr Qrr
TA = 25°C unless otherwise noted
Parameter
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Q1 Q2 Q1 Q2 Q1 Q2
Test Conditions
V GS = 0 V, IS = 1.3 A V GS = 0 V, IS = 1.3 A
(Note 2) (Note 2)
Min
Typ Max
0.8 0.8 16.3 14.5 26.7 21.1 1.2 1.2
Units
V nS nC
DrainSource Diode Characteristics and Maximum Ratings
IF = 4.1 A, di F/dt = 100 A/µs IF = 3.4 A, di F/dt = 100 A/µs IF = 4.1 A, di F/dt = 100 A/µs IF = 3.4 A, di F/dt = 100 A/µs
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78°C/W when mounted on a 0.5in2 pad of 2 oz copper
b)
125°C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135°C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: N-Channel
10
2
V GS = 10V 6.0V
8 ID, DRAIN CURRENT (A)
4.5V 3.5V
RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6
V GS = 3.0V
6
3.5V
1.4
4
3.0V
4.0V
1.2 1 0.8
4.5V 6.0V 10V
2
0 0 1 2 3 V DS, DRAIN-SOURCE VOLTAGE (V)
0
2
4 6 ID, DRAIN CURRENT (A)
8
10
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.25 RDS(ON) , ON-RESISTANCE (OHM)
1.6 R D S ( O N , NORMALIZED ) DRAIN-SOURCE ON-RESISTANCE
ID = 4.1A V GS = 10V
ID = 2 A 0.2
1.4
1.2
0.15
1
T A = 125o C
0.8
0.1 T A = 25 C 0.05
o
0.6 -50
-25
0
25
50
75
100
o
125
150
2
4
6
8
10
T J , JUNCTION TEMPERATURE ( C )
V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
10 100 IS, REVERSE DRAIN CURRENT (A)
o
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
V GS = 0V
10
V DS =5V
8 ID, DRAIN CURRENT (A)
TA =-55 C
25oC 125o C
T A = 125 C
1 0.1 0.01 0.001
o
6
25 C -55 C
o
o
4
2
0 1.5 2 2.5 3 3.5 4 V GS, GATE TO SOURCE VOLTAGE (V)
0.0001 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8333C Rev C (W)
FDS8333C
Typical Characteristics: N-Channel (continued)
10 V GS, GATE-SOURCE VOLTAGE (V)
ID = 4.1A
8
V DS = 5V
400
10V 15V f = 1MHz V GS = 0 V
6
CAPACITANCE (pF)
300
CISS
200
4
2
100
CO S S CRSS
0 0 1 2 3 4 5 Q g, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID , DRAIN CURRENT (A) 10 100µs 1ms 10ms 100ms 1 VGS = 10V SINGLE PULSE RJ A = 135o C/W T A = 25o C 0.01 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 50
Figure 8. Capacitance Characteristics.
40
SINGLE PULSE R JA = 135°C/W T A = 25°C
30
20
0.1
10
0 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS8333C Rev C (W)
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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