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Part: FDS8928A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> MOSFETs
-> N/P-Channel Combo
Description: Dual N & P-channel Enhancement Mode Field Effect Transistor
Company: Fairchild Semiconductor
Datasheet: Download FDS8928A datasheet File size : 117 kB
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Datasheet text preview:
July 1998
FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
N-Channel 5.5 A,30 V, RDS(ON)=0.030 @ VGS=4.5 V RDS(ON)=0.038 @ VGS=2.5 V. P-Channel -4 A,-20 V, RDS(ON)=0.055 @ VGS=-4.5 V RDS(ON)=0.072 @ VGS=-2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual (N & P-Channel) MOSFET in surface mount package.
SOT-23
S u p e r S O T -6
TM
S u p e r S O T -8
TM
SO-8
SOT-223
SOIC-16
D2 D1 D1 D2
5 6 7
4 3 2 1
S FD 8A 2 89
S2 G2 G1
8
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed PD
T A = 25°C unless otherwise noted
N-Channel 30 8
(Note 1a)
P-Channel -20 -8 -4 -20 2
Units V V A
5.5 20
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
W
1.6 1 0.9 -55 to 150 °C
TJ,TSTG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
°C/W °C/W
© 1998 Fairchild Semiconductor Corporation
FDS8928A Rev. B
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25 oC ID = -250 µA, Referenced to 25 oC IDSS IGSSF IGSSR VGS(th) Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = -16 V, VGS = 0 V Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25 C ID = -250 µA, Referenced to 25 C RDS(ON) Static Drain-Source On-Resistance VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.5 A VGS = -4.5 V, ID = -4 A VGS = -2.5 V, ID = -3.4 A ID(on) gFS On-State Drain Current VGS = 4.5 V, VDS= 5 V VGS = -4.5 V, VDS= -5 V Forward Transconductance VDS = 5 V, I D = 5.5 A VDS = -5 V, I D = -4 A DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance VDS = 10 V, VGS = 0 V, f = 1.0 MHz N-Ch P-Ch N-Ch VDS = -10 V, VGS = 0 V, f = 1.0 MHz P-Ch N-Ch P-Ch 900 1130 410 480 110 120 pF pF pF N-Ch P-Ch N-Ch P-Ch 20 -20 20 13 S S P-Ch
o o
N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch All All
30 -20 32 -23 1 -1 100 -100
V V mV/oC
BVDSS/TJ Breakdown Voltage Temp. Coefficient
µA µA nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage N-Ch P-Ch N-Ch P-Ch N-Ch 0.4 -0.4 0.67 -0.6 -3 4 0.025 0.031 0.043 0.059 0.03 0.038 0.055 0.072 A 1 -1 V V mV/oC
VGS(th)/TJ
Gate Threshold Voltage Temp. Coefficient
Input Capacitance
Reverse Transfer Capacitance
FDS8928A Rev. B
Electrical Characteristics (continued)
SWITCHING CHARACTERISTICS Symbol tD(on) Parameter Turn - On Delay Time
(Note 2)
Conditions VDS = 6 V, I D = 1 A VGS = 4.5 V , RGEN = 6
Type N-Ch P-Ch N-Ch P-Ch
Min
Typ 6 8 19 23 42 260 13 90 19.8 20 2 2.8 6.3 3.2
Max 12 16 31 37 67 360 24 125 28 28
Units ns
tr tD(off)
Turn - On Rise Time
ns
Turn - Off Delay Time
VDS= -10 V, I D = -1 A VGS = -4.5 V , RGEN = 6
N-Ch P-Ch N-Ch P-Ch
ns
tf Qg Qgs Qgd
Turn - Off Fall Time
ns
Total Gate Charge
VDS = 10 V, I D = 5.5 A, VGS = 4.5 V
N-Ch P-Ch N-Ch
nC
Gate-Source Charge VDS = -5 V, I D = -4 A, Gate-Drain Charge VGS = -5 V
nC
P-Ch N-Ch P-Ch
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current
N-Ch P-Ch
1.3 -1.3 0.68 -0.7 1.2 -1.2
A A V V
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A
(Note 2) (Note 2)
N-Ch P-Ch
a. 78OC/W on a 0.5 in2 pad of 2oz copper.
b. 125OC/W on a 0.02 in2 pad of 2oz copper.
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%..
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel
30 I D , DRAIN-SOURCE CURRENT (A)
2.5V
R DS(ON) , NORMALIZED
24
3.0V 2.0V
DRAIN-SOURCE ON-RESISTANCE
VGS = 4.5V
2
1.6
18
VGS = 2.0V 2.5 V
1.2
12
3.0V 3.5 V 4.5V
6
1.5V
0 0 1 2 3 4 5 VDS , DRAIN-SOURCE VOLTAGE (V)
0.8 0 6 12 18 24 30 I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
1.8 DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
0.1
R DS(ON) , ON-RESISTANCE (OHM)
1.6 1.4 1.2 1 0.8 0.6 -50
I D = 5.5 A VGS = 4.5 V
0.075
I D = 3A
0.05
TA = 125°C
0.025
25°C
0 1 V 2
GS
-25
0
25
50
75
100
125
150
3
4
5
TJ , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
V DS =5V
I D , DRAIN CURRENT (A) 16
TA = -55°C 25°C 125°C
I S , REVERSE DRAIN CURRENT (A)
20
20 V GS = 0V 1 TA = 125°C 0.1 25°C -55°C 0.01
12
8
4
0.001
0
0.0001 0 0.5 V
GS
1
1.5
2
2.5
3
0
0.2
0.4
0.6
0.8
1
1.2
, GATE TO SOURCE VOLTAGE (V)
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8928A Rev. B
Typical Electrical Characteristics: N-Channel (continued)
5 VGS , GATE-SOURCE VOLTAGE (V) 3000
ID = 5.5A
4
CAPACITANCE (pF)
VDS = 5V 10V 15V
1000 500
C iss C oss
3
2
200
80 1 30 0.1
f = 1 MHz V GS = 0V
0.4 1 2 5 10
C rss
0 0 5 10 15 20 25 Q g , GATE CHARGE (nC)
30
VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
S(O N IM )L IT
30
I D , DRAIN CURRENT (A)
10 3 1 0.3 0.1 0.03 0.01 0.1
RD
1m 10m 100 1s 10s DC ms s
100 s
us
POWER (W)
25 20 15 10 5 0 0.01
SINGLE PULSE RJA =135 °C/W TA = 25°C
VGS = 4.5V SINGLE PULSE RJA =135 °C/W TA = 25°C
0.2 0.5 1 2
0.1
0.5
10
50 100
300
5
10
20 30
50
SINGLE PULSE TIME (SEC)
VDS , DRAI N-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
FDS8928A Rev. B
Others parts begin by fd
FD-1 FD-2 FD-3 FD-4 FD-5 FD-6 FD-7
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