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Part: FDS8934A
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> DMOS (Double-diffused MOS)
-> Enhancement P-Channel
Description: Dual P-channel Enhancement Mode Field Effect Transistor
Company: Fairchild Semiconductor
Datasheet: Download FDS8934A datasheet File size : 117 kB
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Datasheet text preview:
May 1998
FDS8934A Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
SO-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
-4 A , -20 V, RDS(ON) = 0.055 @ VGS = -4.5 V, RDS(ON) = 0.072 @ VGS = -2.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Dual MOSFET in surface mount package.
SOT-23
S u p e r S O T -6
TM
S u p e r S O T -8
TM
SO-8
SOT-223
SOIC-16
D1
D1
D2
D2
S FD 4A 3 89
G1 S2 G2
5 6 7 8
4 3 2 1
SO-8
pin 1
S1
Absolute Maximum Ratings
Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA = 25oC unless otherwise noted FDS8934A -20 -8
(Note 1a)
Units V V A W
-4 -20 2 1.6 1 0.9 -55 to 150 78 40
Power Dissipation for Dual Operation Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ,TSTG RJA RJC
Operating and Storage Temperature Range Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
°C °C/W °C/W
THERMAL CHARACTERISTICS
(Note 1a) (Note 1)
© 1998 Fairchild Semiconductor Corporation
FDS8934A Rev.B
Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse
(Note 2)
Conditions VGS = 0 V, I D = -250 µA ID = -250 µA, Referenced to 25 C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = -250 µA ID = -250 µA, Referenced to 25 C VGS = -4.5 V, I D = -4 A TJ =125°C VGS = -2.5 V, I D = -3.4 A
o o
Min -20
Typ
Max
Units V
OFF CHARACTERISTICS
BVDSS/TJ
IDSS IGSSF IGSSR VGS(th)
-23 -1 -100 -100 -0.4 -0.6 4 0.043 0.062 0.059 -20 13 1130 480 120 0.055 0.077 0.072 -1
mV/oC µA nA nA V mV/oC
ON CHARACTERISTICS
Gate Threshold Voltage Gate Threshold Voltage Temp. Coefficient Static Drain-Source On-Resistance
VGS(th)/TJ
RDS(ON)
ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD
Notes:
On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VGS = -10 V, VDS = -5 V VDS = -10 V, I D = -4 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz
A S pF pF pF 16 37 360 125 28 nC ns
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDS = -10 V, I D = -1 A VGS = -4.5 V , RGEN = 6
8 23 260 90
VDS = -5 V, I D = -4 A, VGS = -5 V
20 2.8 3.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, I S -1.3 A
(Note 2)
-1.3 -0.7 -1.2
A V
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a. 78OC/W on a 0.5 in2 pad of 2oz copper.
b . 125OC/W on a 0.02 in2 pad of 2oz copper.
c. 135OC/W on a 0.003 in2 pad of 2oz copper.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
FDS8934A Rev.B
Typical Electrical Characteristics
20 - ID , DRAIN-SOURCE CURRENT (A)
-3.0V
15
DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V -2.5V -2.0V
R DS(on) , NORMALIZED
3
2.5
V GS = -1.5V
2
10
-2.0V
1.5
5
-1.5V
-2.5V
-3.0V -4.5V
1
0
0
1
2
3
4
5
0.5
0
4
8
12
16
20
-VDS , DRAIN-SOURCE VOLTAGE (V)
- I D , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.2
1.6 DRAIN-SOURCE ON-RESISTANCE
1.4
V GS = -4.5V
R DS(ON) , ON-RESISTANCE (OHM)
I D = -4.0A
I D = -2A
0.15
R DS(ON), NORMALIZED
1.2
0.1
1
TA = 125°C
0.05
0.8
25°C
0
0.6 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (°C)
125
150
0
1
2
3
4
5
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation Temperature.
with
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
10 - IS , REVERSE DRAIN CURRENT (A)
VDS = -5V
- I D , DRAIN CURRENT (A) 8
TJ = -55°C 25°C 125°C
3 1
VGS = 0V
6
0.1
TJ =125°C 25°C -55°C
4
2
0.01
0 0.4
0.8
1.2
1.6
2
0.001
-VGS , GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS8934A Rev.B
Typical Electrical Characteristics (continued)
5 -V GS , GATE-SOURCE VOLTAGE (V)
3000
ID =-4.0A
4
VDS = -5V -15V
CAPACITANCE (pF)
2000
-10V
1000 500
C iss Coss
3
2
200 100
1
C rss f = 1 MHz V GS = 0 V
0.2 0.5 1 2 5 10 20 -VDS , DRAIN TO SOURCE VOLTAGE (V)
0
0
4
8
12
16
20
Q g , GATE CHARGE (nC)
50 0.1
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50 20 - ID , DRAIN CURRENT (A) 10 5 1 0.3 0.1 0.03 0.01 0.1
IT IM )L ON S( RD
50
POWER (W)
V GS = -4.5V SINGLE PULSE RJA = 135°C/W TA = 25°C A
0.2 0.5 1 2
10s DC
1s
10 0m s
1m s 10m s
100
us
40
SINGLE PULSE RJA =135°C/W TA = 25°C
30
20
10
5
10
20 30
50
0 0.001
0.01
0.1
1
10
100
300
- VDS , DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
R JA (t) = r(t) * R JA R JA = 135°C/W
t1
t2
TJ - TA = P * R JA(t) Duty Cycle, D = t1 /t2
0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS8934A Rev.B
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST® FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Others parts begin by fd
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