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Details, datasheet, quote on part number:FDZ2554PZ
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Datasheet text preview:
FDZ2554PZ
June 2003
FDZ2554PZ
Monolithic Common Drain P-Channel 2.5V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554PZ minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON).
Features
· 6.5 A, 20 V. RDS(ON) = 28 m @ VGS = 4.5 V RDS(ON) = 45 m @ VGS = 2.5 V · >4800V ESD Protection · Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 · Ultra-thin package: less than 0.80 mm height when mounted to PCB · Outstanding thermal transfer characteristics: significantly better than SO-8 · Ultra-low Qg x RDS(ON) figure-of-merit · High power and current handling capability
S G Q1
Applications
· Battery management · Load switch · Battery protection
D
D S S S
D S
Pin 1
S
G S G
Q2
S S
F2554Z
Q1
S
D
D Q2
S
D
Pin 1
D
G S
Bottom
Top
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1a) Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
20 ±12 6.5 20 2.1 55 to +150
Units
V V A W °C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1b) (Note 1)
60 108 8
°C/W °C/W °C/W
Package Marking and Ordering Information
Device Marking 2554Z Device FDZ2554PZ Reel Size 7'' Tape width 12mm Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
FDZ2554PZ Rev. C (W)
FDZ2554PZ
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS I GSS VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss RG td(on) tr t d(off) tf Qg Qgs Qgd IS VSD t rr Qrr
Notes: 1.
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±12 V, V GS = 0 V VDS = 0 V
Min Typ
20 13
Max
Units
V mV/°C
Off Characteristics
1 ±10 0.6 0.8 3 21 36 30 20 24 1430 320 170 1.5
µA µA V mV/°C m A S pF pF pF
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 6.5 A VGS = 2.5 V, ID = 5 A VGS = 4.5 V, ID = 6.5 A, TJ=125°C VGS = 4.5 V, VDS = 5V VDS = 5 V, ID = 6.5 A VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V,
28 45 43
Dynamic Characteristics
f = 1.0 MHz
9.2 15 9 60 37 26 18 100 60 21
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 10 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
ns ns ns ns nC nC nC
VDS = 10 V, VGS = 4.5 V
ID = 6.5 A,
15 3 4
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V,IS = 1.75 A Voltage IF = 6.5 A, Reverse Recovery Time diF/dt = 100 A/µs Reverse Recovery Charge
(Note 2)
0.7 25 10
1.75 1.2
A V ns nC
RJA is determined with the device mounted on a 1 in˛ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design.
a)
60°C/W when mounted on a 1in2 pad of 2 oz copper
b)
108°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ2554PZ Rev C (W)
FDZ2554PZ
Typical Characteristics
20
-3.5V -ID, DRAIN CURRENT (A) 15
-2.5V -2.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = - 4.5V
1.8
-3.0V
1.6 VGS = -2.5V 1.4 -3.0V 1.2 -3.5V -4.0V 1 -4.5V
10
5
0 0 0.5 1 1.5 2 -VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 5 10 -ID, DRAIN CURRENT (A) 15 20
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.09
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.3 1.2 1.1 1 0.9 0.8 -50 -25 0 25 50 75 100
o
ID = -6.5A VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
ID = -3.2A 0.07
0.05
TA = 125 C
o
0.03
TA = 25 C
o
0.01
125 150
1.5
2
2.5
3
3.5
4
4.5
TJ, JUNCTION TEMPERATURE ( C)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
20
VDS = -5V
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 -IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
10 1 0.1 0.01
TA = 125oC 25oC -55oC
-ID, DRAIN CURRENT (A)
15
10
TA = 125oC
5
-55oC
25oC
0.001
0 0.5 1 1.5 2 2.5 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ2554PZ Rev C (W)
FDZ2554PZ
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V)
2000
ID = -6.5A VDS = -5V -10V -15V
f = 1MHz VGS = 0 V
4
1600 CAPACITANCE (pF)
Ciss
3
1200
2
800
Coss
1
400
Crss
0 4 8 Qg, GATE CHARGE (nC) 12 16
0
0 0 5 10 15 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT
1ms 10ms 100ms
-ID, DRAIN CURRENT (A)
10
40
SINGLE PULSE RJA = 108°C/W TA = 25°C
1
VGS = -4.5V SINGLE PULSE RJA = 108oC/W TA = 25oC
10s DC
1s
30
20
0.1
10
0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100
0 0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02
RJA(t) = r(t) * RJA RJA = 108 °C/W P(pk) t1
0.01
0.01
t2
SINGLE PULSE
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ2554PZ Rev C (W)
Dimensional Outline and Pad Layout
FDZ2554PZ FDZ2554PZ
FDZ2554PZ Rev C (W)
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