|
Details, datasheet, quote on part number:FDZ299P
| |
Datasheet text preview:
FDZ299P
April 2003
FDZ299P
P-Channel 2.5 V Specified PowerTrench® BGA MOSFET
General Description
Combining Fairchild's advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ299P minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low RDS(ON).
Features
· 4.6 A, 20 V RDS(ON) = 55 m @ VGS = 4.5 V RDS(ON) = 80 m @ VGS = 2.5 V
· Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of a SSOT-6 · Ultra-thin package: less than 0.80 mm height when mounted to PCB · Outstanding thermal transfer characteristics: 4 times better than SSOT-6 · Ultra-low Qg x RDS(ON) figure-of-merit · High power and current handling capability.
Applications
· Battery management · Load switch · Battery protection
S
B
G
Bottom
Top
TA=25 C unless otherwise noted
o
D
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
4.6 10 1.7 55 to +150
Power Dissipation for Single Operation
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA Thermal Resistance, Junction-to-Ambient
(Note 1a)
72
°C/W
Package Marking and Ordering Information
Device Marking B Device FDZ299P Reel Size 7" Tape width 8mm Quantity 3000 units
©2003 Fairchild Semiconductor Corporation
FDZ299P Rev C5 (W)
FDZ299P
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on)
TA = 25° unless otherwise noted C
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage.
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min Typ
20 15
Max
Units
V mV/°C
Off Characteristics
ID = 250 µA, Referenced to 25°C VDS = 16 V, VGS = ±12 V, VGS = 0 V VDS = 0 V 0.6
1 ±100 1.0 3.3 44 68 58 10 13 742 158 77 7.8 9 9 23 14 18 18 37 25 9 1.5
µA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 4.6 A, VGS= 2.5 V, ID = 3.6A, VGS = 4.5 V, ID = 4.6 A, TJ=125°C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 4.6 A
55 80 71
ID(on) gFS Ciss Coss Crss RG td(on) tr td(off) tf Qg Qgs Qgd IS VSD t rr Qrr
A S pF pF pF ns ns ns ns nC nC nC 1.4 A V nS nC
Dynamic Characteristics
VDS = 10 V, f = 1.0 MHz V GS = 0 V,
VGS = 15 mV, f = 1.0 MHz VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDS = 10V, VGS = 4.5 V
ID = 4.6 A,
6.6 1.6 1.8
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 1.4 A Voltage Diode Reverse Recovery Time IF = 4.6 A, Diode Reverse Recovery Charge diF/dt = 100 A/µs
(Note 2)
0.8 18 6.5
1.2
Notes: 1. RJA is determined with the device mounted on a 1 in˛ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the
a)
72° /W when C mounted on a 1in2 pad of 2 oz copper, 1.5" x 1.5" x 0.062" thick PCB
b)
157° /W when mounted C on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ299P Rev C5 (W)
FDZ299P
Dimensional Outline and Pad Layout
FDZ299P Rev C5 (W)
FDZ299P
Typical Characteristics
10
2.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = -4.5V
-ID, DRAIN CURRENT (A) 8
-3.5V
-3.0V -2.5V
2.2 2 1.8 1.6 1.4 1.2 1 0.8
VGS = -2.0V
6
-2.0V
-2.5V -3.0V -3.5V -4.5V
4
2
0 0 0.5 1 1.5 2 2.5 -VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.18 RDS(ON), ON-RESISTANCE (OHM)
1.5 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100
o
ID = -4.6A VGS = -4.5V
ID = -2.3A
0.15
0.12
TA = 125oC
0.09
TA = 25oC
0.06
125
150
0.03 1 .5 2 2 .5 3 3 .5 4 4 .5 5 -VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
10
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V
VDS = -5V
-ID, DRAIN CURRENT (A) 8
1 TA = 125oC 25oC 0.01 -55oC 0.001
6
0.1
4
TA = 125oC
2
25o C -55oC
0.5 1 1.5 2 2.5
0 -VGS, GATE TO SOURCE VOLTAGE (V)
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ299P Rev C5 (W)
FDZ299P
Typical Characteristics
5 -VGS, GATE-SOURCE VOLTAGE (V)
1000 ID = -4.6A VDS = -5V -15V -10V 800 CAPACITANCE (pF) CISS
f = 1MHz VGS = 0 V
4
3
600
2
400 COSS 200 CRSS
1
0 0 2 4 Qg, GATE CHARGE (nC) 6 8
0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms 10ms 100ms 1s 20
Figure 8. Capacitance Characteristics.
-ID, DRAIN CURRENT (A)
10
100us
15
SINGLE PULSE RJA = 157° /W C TA = 25° C
1 VGS = -4.5V SINGLE PULSE RJA = 157oC/W TA = 25oC 0.01 0.1 1
10s DC
10
0.1
5
10
100
0 0.01
0.1
1
10
100
1000
-VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01
RJA(t) = r(t) * RJA RJA = 157 °C/W P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1
0.01
SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ299P Rev C5 (W)
|
|
