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Details, datasheet, quote on part number:FDZ5047N
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| Part: | FDZ5047N |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 30V N-channel Logic Level PowerTrench® Bga MOSFET Advanced |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FDZ5047N datasheet File size : 236 kB |
| Request For quote: | Find where to buy FDZ5047N
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Datasheet text preview:
FDZ5047N
February 2003
FDZ5047N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ5047N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
· 22 A, 30 V. RDS(ON) = 2.9 m @ VGS = 10 V RDS(ON) = 4.5 m @ VGS = 4.5 V
· Occupies only 27.5 mm2 of PCB area: 1/5 of the area of a TO-220 package · Ultra-thin package: less than 0.90 mm height when mounted to PCB · Outstanding thermal transfer characteristics · Ultra-low gate charge x RDS(ON) product
Applications
· DC/DC converters · Solenoid drive
D D D D D
Pin 1
D S S S S G
D S S S S
D S S S S
D S S S S
D D D D D
Pi n 1
D
F5 0 4 7
G
D
S
S
S
D
Bottom
Top
TA=25 C unless otherwise noted
o
S
Absolute Maximum Ratings
VDSS ID PD TJ, TSTG
Symbol
Drain-Source Voltage Gate-Source Voltage Drain Current
Parameter
Ratings
30 ±20
(Note 1a)
Units
V
VGSS
Continuous Pulsed
22 75 2.8 50 to +150
A W °C
Total Power Dissipation @ TA = 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJB RJC
Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
44 2.7 0.3
°C/W
Package Marking and Ordering Information
Device Marking 5047N
©2003 Fairchild Semiconductor Corporation.
Device
Reel Size 13''
Tape width 12mm
Quantity 3000 units
FDZ5047N Rev D3(W)
FDZ5047N
FDZ5047N
Electrical Characteristics
Symbol
BVDSS
TA = 25° unless otherwise noted C
Parameter
DrainSource Breakdown Voltage
Test Conditions
VGS = 0 V, ID = 250 µA
Min
30
Typ
Max Units
V
Off Characteristics
BVDSS TJ IDSS IGSSF IGSSR VGS(th)
Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Forward Leakage GateBody Reverse Leakage
(Note 2)
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 20 V, VGS = 20 V, VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 1
24 1 100 100 1.3 5 2.3 3.2 3.4 50 100 4993 1144 498 2.9 4.5 5.0 3
mV/°C µA nA nA V mV/°C m A S pF pF pF 20 22 190 88 73 ns ns ns ns nC nC nC 2.3 A V nS nC
On Characteristics
VGS(th) TJ RDS(on) ID(on) gFS Ciss
Gate Threshold Voltage
Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance
ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 22 A VGS = 4.5 V, ID = 18 A VGS = 10 V, ID = 22 A, TA=125°C VGS = 10 V, VDS = 5V VDS = 10 V, VDS = 15 V, f = 1.0 MHz ID = 22 A VGS = 0 V,
Dynamic Characteristics
Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS Output Capacitance Reverse Transfer Capacitance
(Note 2)
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
11 12 119 55
VDS = 15 V, VGS = 5 V
ID = 22 A,
52 11 17
DrainSource Diode Characteristics and Maximum Ratings
VSD t rr Qrr
·
Maximum Continuous DrainSource Diode Forward Current (Note 1a) VGS = 0 V, IS = 2.3 A
(Note 2)
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
Notes:
0.7 42 59
1.2
IF = 22A, diF/dt = 100 A/µs
1. RJA is determined with the device mounted on a 1 in˛ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user' board design. s circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper
a)
44° /W when mounted C 2 on a 1in pad of 2 oz copper
b)
95° /W when mounted on C a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ5047N Rev D3(W)
FDZ5047N
Typical Characteristics
100
4.5V
ID, DRAIN CURRENT (A) 80
3.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V
2. 6
3. 0V
2. 4 2. 2 2 1. 8 1. 6 1. 4 1. 2 1 0.8 0
VGS = 3.0V
60
3.5V
40
2.5V
4. 5V 6. 0V 10V
20
0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V)
20
40
60
80
100
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.016 RDS(ON), ON-RESISTANCE (OHM)
1. 8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1. 6 1. 4 1. 2 1 0. 8 0. 6 0.4 -50 -25 0 25 50 75 10 0 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 22A VGS = 10V
ID = 11 A
0.012
0.008
TA = 125oC
0.004
TA = 25oC
0.000 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
80
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V
VDS = 10V
ID, DRAIN CURRENT (A) 60
IS, REVERSE DRAIN CURRENT (A)
10 1 0. 1 0. 01 0. 001 0.0001 TA = 125oC 25o C -55oC
40
20
TA = 125 C
o
25o C -55 C
o
0 1 1 .5 2 2 .5 3 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0. 4
0. 6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ5047N Rev D3(W)
FDZ5047N
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
ID = 22A
8
VDS =10V 15V CAPACITANCE (pF) 20V
8000 f =1MHz VGS = 0V 6000 CISS 4000 COSS 2000
6
4
2
0 0 20 40 60 80 100 Qg, GATE CHARGE (nC)
0 0
CRSS 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 100ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 95oC/W TA = 25oC 10m s 1m s
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
40
SINGLE PULSE RJA = 95° /W C C TA = 25°
30
1
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 95 ° /W C P (pk ) t1 t2 T J - T A = P * R J A ( t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.1
0.1 0.05 0.02
0.01
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ5047N Rev D3(W)
FDZ5047N
Dimensional Outline and Pad Layout
FDZ5047N Rev D3(W)
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