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Details, datasheet, quote on part number:FDZ7064N
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Datasheet text preview:
FDZ7064N
January 2003
FDZ7064N
30V N-Channel Logic Level PowerTrench BGA MOSFET
General Description
Combining Fairchild's 30V PowerTrench process with state of the art BGA packaging, the FDZ7064N minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications resulting in DC/DC power supply designs with higher overall efficiency.
Features
· 13.5 A, 30 V. RDS(ON) = 8.0 m @ VGS = 4.5 V RDS(ON) = 7.0 m @ VGS = 10 V · Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 · Ultra-thin package: less than 0.80 mm height when mounted to PCB · 3.5 x 4 mm2 Footprint · High power and current handling capability.
Applications
· DC/DC converters · Solenoid drive
Pin 1
D D D D D S S S G D S S S S D S S S S D S S S S D D D D D
D
F7064
G
Pin 1
D
S
Bottom
Top
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1a) Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
30 ±12 13.5 60 2.2 55 to +150
Units
V V A W °C
Thermal Characteristics
RJA RJB RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
56 4.5 0.6
°C/W
Package Marking and Ordering Information
Device Marking 7064N Device FDZ7064N Reel Size 13" Tape width 12mm Quantity 3000
2003 Fairchild Semiconductor Corporation
FDZ7064N Rev. D2 (W)
FDZ7064N
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF I G SSR VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS V SD t rr Qrr
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)
Test Conditions
VGS = 0 V, ID = 250 µA
Min
30
Typ
Max Units
V
Off Characteristics
ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = 12 V, VGS = 12 V, VDS = VGS, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 µA 0.8 1.2 4.6 6.1 5.4 9.0 60 92 3843 522 209 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 9 71 18 VDS = 15 V, VGS = 4.5 V ID = 13.5 A, 31 8 7.4 1.8 1.2 20 18 114 32 43 8.0 7.0 13 21 1 100 100 2.0 mV/°C µA nA nA V mV/°C m A S pF pF pF ns ns ns ns nC nC nC A V nS nC
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
ID = 250 µA, Referenced to 25°C VGS = 4.5 V, ID = 13.5 A ID = 14.5 A VGS = 10 V, VGS = 4.5 V, ID = 13.5A, TJ =125°C VGS = 10 V, VDS = 5 V VDS = 10 V, ID = 13.5 A
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
DrainSource Diode Characteristics and Maximum Ratings
Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward VGS = 0 V, IS = 1.8 A Voltage Diode Reverse Recovery Time IF = 13.5 A, diF/dt = 100 A/µs Diode Reverse Recovery Charge
(Note 2)
0.7 30 35
Notes: 1. RJA is determined with the device mounted on a 1 in˛ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB, is defined for reference. For RJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design.
a)
56°C/W when 2 mounted on a 1in pad of 2 oz copper
b)
119°C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ7064N Rev. D2(W)
FDZ7064N
Dimensional Outline and Pad Layout
FDZ7064N Rev. D2(W)
FDZ7064N
Typical Characteristics
60 50 ID, DRAIN CURRENT (A) 40 30 20
2 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.5V 3.0V 1.8 VGS = 2.5V 1.6 1.4 1.2 1 0.8
0 0.5 1 1.5 2
3.0V 3.5V 4.5V 6.0V 10V
2.0V
10 0 VDS, DRAIN-SOURCE VOLTAGE (V)
0
10
20
30
40
50
60
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.022 RDS(ON), ON-RESISTANCE (OHM)
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 13.5A VGS = 10V
ID =6.8 A
0.018
1.4
1.2
0.014
TA = 125oC
0.01
1
TA = 25oC
0.006
0.8
0.6 -50 -25 0 25 50 75 100
o
125
150
175
0.002 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with Temperature.
60
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A) VGS = 0V 10 1 0.1 0.01 0.001 0.0001 -55oC TA = 125oC 25oC
VDS = 5V
50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
TA = 125oC
25 C
o
-55oC
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ7064N Rev. D2(W)
FDZ7064N
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 20V 6 VDS = 10V 15V CAPACITANCE (pF)
5000 CISS 4000 f = 1MHz VGS = 0 V
3000
4
2000 COSS 1000 CRSS
2
0 0 10 20 30 40 50 60 70 Qg, GATE CHARGE (nC)
0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
ID, DRAIN CURRENT (A)
100 RDS(ON) LIMIT 10 1s 1 10s VGS = 10V SINGLE PULSE RJA = 119oC/W TA = 25oC DC 1ms 10ms 100ms
100us
40
SINGLE PULSE RJA = 119°C/W TA = 25°C
30
20
0.1
10
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 119 °C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.1
0.1 0.05 0.02
0.01
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ7064N Rev. D2(W)
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