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Details, datasheet, quote on part number:FDZ7064S
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Datasheet text preview:
FDZ7064S
March 2003
FDZ7064S
30V N-Channel PowerTrench® SyncFETTM BGA MOSFET
General Description
This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild's 30V PowerTrench SyncFET process with state of the art BGA packaging, the FDZ7064S minimizes both PCB space and RDS(ON). This BGA SyncFET embodies a breakthrough in both packaging and power MOSFET integration which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, ultra-low reverse recovery charge and low RDS(ON).
Features
· 13.5 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V RDS(ON) = 8.8 m @ VGS = 4.5 V · Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 · Ultra-thin package: less than 0.8 mm height when mounted to PCB · 3.5 x 4 mm2 Footprint · High power and current handling capability.
D
Applications
· DC/DC converters
D
D D D
D
S S S G
D S S S S
D S S S S
D S S S S
D D D D D
Pin 1
F7064S
G
Pin 1
D
S
Bottom
Top
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous (Note 1a) Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range
Ratings
30 ±16 13.5 60 2.2 55 to +150
Units
V V A W °C
Thermal Characteristics
R JA R JB R JC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1) (Note 1)
56 4.5 0.6
°C/W
Package Marking and Ordering Information
Device Marking 7064S Device FDZ7064S Reel Size 13" Tape width 12mm Quantity 3000
©2003 Fairchild Semiconductor Corporation
FDZ7064S Rev. B (W)
FDZ7064S
Electrical Characteristics
Symbol
BVDSS BVDSS ? TJ IDSS I GSS VGS(th) VGS(th) ? TJ RDS(on)
TA = 25°C unless otherwise noted
Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1mA
Min
30
Typ
Max
Units
V
Off Characteristics
ID = 10mA, Referenced to 25°C VDS = 24 V, V GS = 0 V VGS = ±16 V, VDS = 0 V VDS = VGS, ID = 1mA 1 1.4 0.5 6 7 9 60 66 2840 525 190 11 12 50 18 VDS = 15 V, V GS = 5 V ID = 13.5 A, 25 7 6 VGS = 0 V, IS = 3.2 A 0.4 22 19 0.7 20 22 80 32 35 7.2 8.8 11 26 500 ±100 3 mV/°C uA nA V mV/°C m
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
ID = 10mA, Referenced to 25°C VGS = 10 V, ID = 13.5 A VGS = 4.5 V, ID = 12 A VGS=10 V, ID=13.5A, TJ =125°C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 13.5 A
ID(on) gFS Ciss Coss Crss td(on) tr t d(off) tf Qg Qgs Qgd VSD t rr Qrr
A S pF pF pF ns ns ns ns nC nC nC V ns nC
Dynamic Characteristics
VDS = 15 V, f = 1.0 MHz V GS = 0 V,
Switching Characteristics
TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDS = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6 ?
DrainSource Diode Characteristics
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
(Note 1)
IF = 13.5 A, diF/dt = 300 A/µs See Diode Characteristic, page 5
Notes: 1. R? JA is determined with the device mounted on a 1 in˛ 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, R? JB, is defined for reference. For R? JC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. R? JC and R? JB are guaranteed by design while R? JA is determined by the user's board design. b) 119°C/W when mounted on a minimum pad of 2 oz copper
a)
56°C/W when 2 mounted on a 1in pad of 2 oz copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ7064S Rev. B (W)
©2003 Fairchild Semiconductor Corporation
FDZ7064S
Typical Characteristics
60.00 50.00 ID, DRAIN CURRENT (A) 40.00 30.00 20.00 10.00 2.0V 0.00 0.00 0.25 0.50 0.75 1.00 1.25 1.50
2.25 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
V G S =10.0 V 3.5V 6.0V 4.5V 2.5V 3.0V VGS = 2.5V
2 1.75 1.5 1.25 1 0.75 0 10 20 30 40 50 60
3.0V 3.5V 4.0V 4.5V 6.0V 10.0V
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
40 RDS(ON), ON-RESISTANCE (MILLIOHM)
1.60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 13.5A VGS = 10V 1.40
ID =6.8A
30
1.20
20
1.00
TA = 125oC
10
0.80
TA = 25oC
0
0.60 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with Temperature.
60 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 50 ID, DRAIN CURRENT (A) 40 30 20 10 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 25oC TA = 125oC
TA = 125 C 25 C
o
o
-55oC
-55oC
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDZ7064S Rev B (W)
FDZ7064S
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 13.5A 8 VDS = 10V
4000 f = 1MHz VGS = 0 V CAPACITANCE (pF) 3000 Ciss 2000
6
15V 20V
4
2
1000 Crss 0
Coss
0 0 10 20 30 40 50 Qg, GATE CHARGE (nC)
0
5
10
15
20
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT ID, DRAIN CURRENT (A) 100 10ms 10 1s 1 VGS = 10V SINGLE PULSE RJA = 119oC/W TA = 25oC 0.01 0.01 0.1 1 10 100 DC 10s 100ms 1ms
40
SINGLE PULSE RJA = 119°C/W TA = 25°C
30
20
0.1
10
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * RJA RJA = 119 °C/W
0.05 0.02
0.1
0.1
P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.01
0.001 0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDZ7064S Rev B (W)
FDZ7064S
Typical Characteristics
SyncFET Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 FDZ7064S.
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1
TA = 125oC
0.01
CURRENT : 0.4A/div
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001 0 5 10 15 20 25 30 VDS, REVERSE VOLTAGE (V)
Figure 12. FDZ7064S SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET .
Figure 14. SyncFET diode reverse leakage versus drain-source voltage and temperature.
CURRENT : 0.4A/div
Figure 13. Non-SyncFET (FDZ7064N) body diode reverse recovery characteristic.
FDZ7064S Rev B (W)
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