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Details, datasheet, quote on part number:FPBL30SL60
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Datasheet text preview:
FPBL30SL60
FPBL 30SL60
Smart Power Module (SPM)
General Description
FPBL30SL60 is an advanced smart power module (SPM) that Fairchild has newly developed and designed to provide very compact and low cost, yet high performance ac motor drives mainly targeting low speed low-power inverter-driven application like air conditioners. It combines optimized circuit protection and drive matched to low-loss IGBTs. Highly effective short-circuit current detection/protection is realized through the use of advanced current sensing IGBT chips that allow continuous monitoring of the IGBTs current. System reliability is further enhanced by the integrated under-voltage lock-out protection. The high speed built-in HVIC provides opto-coupler-less IGBT gate driving capability that further reduce the overall size of the inverter system design. In addition the incorporated HVIC facilitates the use of single-supply drive topology enabling the FPBL30SL60 to be driven by only one drive supply voltage without negative bias.
Features
· UL Certified No. E209204 · 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection · Single-grounded power supply due to built-in HVIC · Typical switching frequency of 3kHz · Inverter power rating of 2kW / 100~253 Vac · Isolation rating of 2500Vrms/min. · Very low leakage current due to using ceramic substrate · Adjustable current protection level by varying series resistor value with sense-IGBTs
Applications
· AC 100V ~ 253V three-phase inverter drive for small power (2kW) ac motor drives · Home appliances applications requiring low switching frequency operation like air conditioners drive system · Application ratings: - Power : 2kW / 100~253 Vac - Switching frequency : Typical 3kHz (PWM Control) - 100% load current : 15A (Irms)
External View and Marking Information
Top View Bottom View
57 mm
55 mm
Marking
Device Name Version, Lot Code
Fig. 1.
©2003 Fairchild Semiconductor Corporation Rev. C1, May 2003
FPBL30SL60
Integrated Power Functions
· 600V-30A IGBT inverter for three-phase DC/AC power conversion (Please refer to Fig. 3)
Integrated Drive, Protection and System Control Functions
· For inverter high-side IGBTs: Gate drive circuit, High voltage isolated high-speed level shifting Control circuit under-voltage (UV) protection Note) Available bootstrap circuit example is given in Figs. 10, 15 and 16. · For inverter low-side IGBTs: Gate drive circuit, Short circuit protection (SC) Control supply circuit under-voltage (UV) protection · Fault signaling: Corresponding to a SC fault (Low-side IGBTs) or a UV fault (Low-side supply) · Input interface: 5V CMOS/LSTTL compatible, Schmitt trigger input
Pin Configuration
Top View
VS(U) VB(U) VCC(L) COM(L) IN(UL) IN(VL) IN(WL) VFO CFOD CSC RSC NC NC NC VCC(UH) IN(UH)
VS(V) VB(V) VCC(VH) IN(VH) COM(H) VS(W) VB(W) VCC(WH) IN(WH)
W
V
U
N
P
Fig. 2.
Pin Descriptions
Pin Number 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Pin Name VCC(L) C O M( L ) IN(UL) IN(VL) IN(WL) V FO CFOD CS C RS C NC NC NC W V U N Pin Description Low-side Common Bias Voltage for IC and IGBTs Driving Low-side Common Supply Ground Signal Input Terminal for Low-side U Phase Signal Input Terminal for Low-side V Phase Signal Input Terminal for Low-side W Phase Fault Output Terminal Capacitor for Fault Output Duration Time Selection Capacitor (Low-pass Filter) for Short-current Detection Input Resistor for Short-circuit Current Detection No Connection No Connection No Connection Output Terminal for W Phase Output Terminal for V Phase Output Terminal for U Phase Negative DCLink Input
©2003 Fairchild Semiconductor Corporation
Rev. C1, May 2003
FPBL30SL60
Pin Descriptions (Continued)
Pin Number 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Pin Name P IN(WH) VCC(WH) VB(W) VS(W) COM(H) IN(VH) VCC(VH) VB(V) VS(V) IN(UH) VCC(UH) VB(U) VS(U) Pin Description Positive DCLink Input Signal Input Terminal for High-side W Phase High-side Bias Voltage for W Phase IC High-side Bias Voltage for W Phase IGBT Driving High-side Bias Voltage Ground for W Phase IGBT Driving High-side Common Supply Ground Signal Input Terminal for High-side V Phase High-side Bias Voltage for V Phase IC High-side Bias Voltage for V Phase IGBT Driving High-side Bias Voltage Ground for V Phase IGBT Driving Signal Input Terminal for High-side U Phase High-side Bias Voltage for U Phase IC High-side Bias Voltage for U Phase IGBT Driving High-side Bias Voltage Ground for U Phase IGBT Driving
Internal Equivalent Circuit and Input/Output Pins
(29) VB(U) VB (1) VCC(L) (2) COM(L) (3) IN(UL) (4) IN(VL) (5) IN(WL) ( 6 ) VF O VCC COM(L) IN(UL) IN(VL) IN(WL) V(FO) Wout (7) CFOD ( 8 ) CSC (9) RSC (10) NC (11) NC (12) NC C(FOD) C(SC) VB HO Vc c IN Vout Uout HO Vc c IN (28) VCC(UH) (27) IN(UH)
VS COM (30) VS(U) (25) VB(V) VB HO Vc c IN (24) VCC(VH) (23) IN(VH) (22) COM(H) (26) VS(V) (20) VB(W) (19) VCC(WH) (18) IN(WH)
VS COM
VS COM (21) VS(W)
W (13)
V (14)
U (15)
N (16)
P (17)
Note 1. Inverter low-side ( (1) - (12) pins) is composed of three sense-IGBTs including freewheeling diodes for each IGBT and one control IC which has gate driving, current sensing and protection functions. 2. Inverter power side ( (13) - (17) pins) is composed of two inverter dc-link input terminals and three inverter output terminals. 3. Inverter high-side ( (18) - (30) pins) is composed of three normal-IGBTs including freewheeling diodes and three drive ICs for each IGBT.
Fig. 3.
©2003 Fairchild Semiconductor Corporation
Rev. C1, May 2003
FPBL30SL60
Absolute Maximum Ratings
Inverter Part (TC = 25°C,
I te m Supply Voltage Supply Voltage (Surge) Collector-Emitter Voltage Each IGBT Collector Current Each IGBT Collector Current (Peak) Collector Dissipation Operating Junction Temperature Unless Otherwise Specified) Symbol VD C VPN(Surge) VCES ± IC ± ICP PC TJ TC = 25°C (Note Fig. 4) TC = 25°C (Note Fig. 4) TC = 25°C per One Chip (Note 1) Condition Applied to DC - Link Applied between P- N Rating 450 500 600 30 60 56 -55 ~ 150 Un i t V V V A A W °C
Note 1. It would be recommended that the average junction temperature should be limited to TJ 125°C (@TC 100°C) in order to guarantee safe operation.
Control Part (TC = 25°C,
Item Control Supply Voltage
Unless Otherwise Specified) Symbol Condition Applied between VCC(H) - COM(H), VCC(L) - COM(L) VCC VBS VIN VF O IFO VSC Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) VS(W) Applied between IN(UH), IN(VH), IN(WH) - COM(H) IN(UL), IN(VL), IN(WL) - COM(L) Applied between VFO - COM(L) Sink Current at VFO Pin Applied between CSC - COM(L) Rating 18 20 -0.3 ~ 6.0 -0.3~VCC+0.5 5 -0.3~VCC+0.5 Unit V V V V mA V
High-side Control Bias Voltage Input Signal Voltage Fault Output Supply Voltage Fault Output Current Current Sensing Input Voltage
Total System
I te m Self Protection Supply Voltage Limit (Short Circuit Protection Capability) Module Case Operation Temperature Storage Temperature Isolation Voltage Symbol Condition VDC(PROT) Applied to DC - Link, VCC = VBS = 13.5 ~ 16.5V TJ = 125°C, Non-repetitive, less than 6µs TC TSTG VISO 60Hz, Sinusoidal, AC 1 minute, Connection Pins to Heat-sink Plate Note Fig. 4 Rating 400 Unit V
-20 ~ 100 -55 ~ 150 2500
°C °C Vrms
©2003 Fairchild Semiconductor Corporation
Rev. C1, May 2003
FPBL30SL60
Case Temperature (TC) Detecting Point
VS(U) VB(U) VCC(L) COM(L) IN(UL) IN(VL) IN(WL) VFO CFOD CSC RSC NC NC NC VCC(UH) IN(UH)
VS(V) VB(V) VCC(VH) IN(VH) COM(H) VS(W) VB(W) VCC(WH) IN(WH)
Cer amic Substate
W
V
U
N
P
Fig. 4. Tc Measurement Point
©2003 Fairchild Semiconductor Corporation
Rev. C1, May 2003
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