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Details, datasheet, quote on part number:FQA11N90C
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FQA11N90C
FQA11N90C
900V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.
Features
· · · · · · 11A, 900V, RDS(on) = 1.1 @VGS = 10 V Low gate charge ( typical 60 nC) Low Crss ( typical 23 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G!
TO-3P
G DS
FQA Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA11N90C 900 11.0 6. 9 44.0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
960 11.0 30 4. 0 300 2.38 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0. 24 -M ax 0. 42 -40 Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
FQA11N90C
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 900 V, VGS = 0 V VDS = 720 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 900 ------1.02 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 5.5 A VDS = 50 V, ID = 5.5 A
(Note 4)
3.0 ---
-0.91
5. 0 1. 1 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---253 0 215 23 32 90 280 30 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 720 V, ID = 11.0 A, VGS = 10 V
(Note 4, 5)
VDD = 450 V, ID = 11.0 A, RG = 25
(Note 4, 5)
--------
60 130 130 85 60 13 25
130 270 270 180 80 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 11.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---100 0 17.0
11.0 44.0 1. 4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 15mH, IAS = 11.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 11.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
FQA11N90C
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150 C
o
o
10
0
25 C
10
0
o
-55 C
Notes :
10
-1
1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
Notes : 1. VDS = 50V 2. 250 s Pulse Test
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
2.5
RDS(ON) [ ], Drain-Source On-Resistance
2.0
VGS = 20V
1.5
IDR , Reverse Drain Current [A]
VGS = 10V
10
1
10
0
1.0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.5
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current
4500 4000 3500 3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 180V
10
VGS , Gate-Source Voltage [V]
Ciss
VDS = 450V VDS = 720V
8
Capacitance [pF]
2500
Coss
2000 1500 1000 500 0 -1 10
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 11A
0 10
0
10
1
0
10
20
30
40
50
60
70
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
FQA11N90C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 5.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
Figure 8. On-Resistance Variation
12 10
2
Operation in This Area is Limited by R DS(on)
10
100 µs
10 µs
ID, Drain Current [A]
10 ms DC
10
0
ID, Drain Current [A]
10
1
1 ms
8
6
4
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
2
10
-2
10
0
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z J C( t ) = 0 . 4 2 / W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z JC( t )
P DM t1
s in g le p u ls e
JC
Z
10
-2
0 .0 1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
FQA11N90C
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2002 Fairchild Semiconductor Corporation
Rev. A, December 2002
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