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Details, datasheet, quote on part number:FQA24N50F
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Datasheet text preview:
FQA24N50F
September 2001
FRFET
FQA24N50F
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, where the body diode is used such as phase-shift ZVS, basic full-bridge topology.
TM
Features
· · · · · · · 24A, 500V, RDS(on) = 0.2 @VGS = 10 V Low gate charge ( typical 90 nC) Low Crss ( typical 55 pF) Fast switching 100% avalanche tested Improved dv/dt capability Fast recovery body diode ( max, 250ns )
D
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"
G! G DS
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TO-3P
FQA Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQA24N50F 500 24 15.2 96 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
1100 24 29 15 290 2.33 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0. 24 -M ax 0. 43 -40 Units °C/W °C/W °C/W
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
FQA24N50F
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.53 ------50 500 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 12 A VDS = 50 V, ID = 12 A
(Note 4)
3.0 ---
-0. 156 22
5. 0 0. 2 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---350 0 520 55 45 00 670 70 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 24 A, VGS = 10 V
(Note 4, 5)
VDD = 250 V, ID = 24 A, RG = 25
(Note 4, 5)
--------
80 250 200 155 90 23 52
170 500 400 320 120 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 24 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 24 A, dIF / dt = 100 A/µs
(Note 4)
------
----1. 1
24 96 1. 4 250 --
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 3.4mH, IAS = 24A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 24A, di/dt 350A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
FQA24N50F
Typical Characteristics
Top :
10
1
ID , Drain Current [A]
ID , Drain Current [A]
Bottom :
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V
10
1
150 25 10
0
-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.6
0.5
0.4
IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
VGS = 10V VGS = 20V
10
1
0.3
0.2
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.1
Note : TJ = 25
0.0
0
20
40
60
80
100
120
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
7000 6000 5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 100V
10
VDS = 250V VDS = 400V
VGS, Gate-Source Voltage [V]
Ciss Coss
8
Capacitance [pF]
4000 3000 2000 1000 0 -1 10
6
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 24 A
10
0
10
1
0
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
FQA24N50F
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 12 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
25
Operation in This Area is Limited by R DS(on)
10
2
20
10 µs
ID, Drain Current [A]
10
1
1 ms 10 ms DC
ID, Drain Current [A]
100 µs
15
10
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
5
10
-1
10
0
10
1
10
2
10
3
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
-1
10
0 .2 0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z J C( t) = 0 .4 3 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z J C( t )
P DM t1
s in g le p u ls e
JC
Z
10
-2
0 .0 1
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
FQA24N50F
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2001 Fairchild Semiconductor Corporation
Rev. A2, September 2001
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