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Details, datasheet, quote on part number:FQB2P25
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| Part: | FQB2P25 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 250V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQB2P25 datasheet File size : 573 kB |
| Request For quote: | Find where to buy FQB2P25
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Datasheet text preview:
FQB2P25 / FQI2P25
April 2000
FQB2P25 / FQI2P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
QFET
Features
· · · · · · -2.3A, -250V, RDS(on) = 4.0 @VGS = -10 V Low gate charge ( typical 6.5 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
D
S
!
G! G S
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
!
!
D Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB2P25 / FQI2P25 -250 -2. 3 -1.45 -9. 2 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
120 -2. 3 5. 2 -5. 5 3.13 52 0.42 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 2.4 40 62. 5 Units °CW °CW °CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2P25 / FQI2P25
Electrical CharacteristicsT
Symbol P a r a m e te r
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -250 V, VGS = 0 V VDS = -200 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -250 -------0.2 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -1.15 A VDS = -40 V, ID = -1.15 A
(Note 4)
-3. 0 ---
-3. 15 1.2
-5. 0 4.0 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---190 40 6.5 250 55 8.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -125 V, ID = -2.3 A, RG = 25
(Note 4, 5)
--------
8.5 40 12 25 6.5 1.8 3.0
25 90 35 60 8.5 ---
ns ns ns ns nC nC nC
VDS = -200 V, ID = -2.3 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -2.3 A, dIF / dt = 100 A/µs
(Note 4)
------
---110 0.4
-2. 3 -9. 2 -5. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 36mH, IAS = -2.3A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD -2.3A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2P25 / FQI2P25
Typical Characteristics
-I D, Drain Current [A]
10
0
-ID , Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top :
10
0
150 25 -55
Notes : 1. VDS = -40V 2. 250 Pulse Test s
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
15
VGS = - 10V 9 VGS = - 20V 6
-IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
12
10
0
150
25
3
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
-1
0 0.0
1.5
3.0
4.5
6.0
10
-ID , Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = -50V
10
VDS = -125V VDS = -200V
300
-VGS, Gate-Source Voltage [V]
Capacitance [pF]
Ciss Coss
8
6
200
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
100
Crss
2
Note : ID = -2.3 A
0 -1 10
10
0
10
1
0
0
1
2
3
4
5
6
7
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2P25 / FQI2P25
Typical Characteristics
(Continued)
1.2
2.5
-BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
Notes : 1. VGS = -10 V 2. ID = -1.15 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
2.5
Operation in This Area is Limited by R DS(on)
10
1
2.0
-I D, Drain Current [A]
10 ms
10
0
-I D, Drain Current [A]
1 ms DC
100 µs
1.5
1.0
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.5
10
-2
10
0
10
1
10
2
0.0 25
50
75
100
125
150
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C( t) = 2 .4 /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z J C( t)
10
-1
JC
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB2P25 / FQI2P25
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
td(on)
t on tr td(of f)
t off tf
VGS
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG -10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
V DD DUT
VDD ID (t) IAS BVDSS
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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