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Details, datasheet, quote on part number:FQB2P40
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| Part: | FQB2P40 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 400V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQB2P40 datasheet File size : 601 kB |
| Request For quote: | Find where to buy FQB2P40
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Datasheet text preview:
FQB2P40 / FQI2P40
December 2000
FQB2P40 / FQI2P40
400V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for electronic lamp ballasts based on the complementary half bridge topology.
QFET
Features
· · · · · · -2.0A, -400V, RDS(on) = 6.5 @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
D
S
!
G! G S
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB2P40 / FQI2P40 -400 -2. 0 -1.27 -8. 0 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
120 -2. 0 6. 3 -4. 5 3.13 63 0.51 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 1. 98 40 62. 5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
FQB2P40 / FQI2P40
Elerical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -400 V, VGS = 0 V VDS = -320 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -400 -------------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -1.0 A VDS = -50 V, ID = -1.0 A
(Note 4)
-3. 0 ---
-5.0 1. 42
-5. 0 6.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---270 45 6.5 350 60 8.5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -200 V, ID = -2.0 A, RG = 25
(Note 4, 5)
--------
9 33 22 25 10 2.1 5.5
30 75 55 60 13 ---
ns ns ns ns nC nC nC
VDS = -320 V, ID = -2.0 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -2.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -2.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---250 0. 85
-2 . 0 -8. 0 -5. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 52.5mH, IAS = -2.0A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD -2.0A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
FQB2P40 / FQI2P40
Typical Characteristics
-I D , Drain Current [A]
10
0
-I D, Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top :
10
0
150
10
-1
25 -55
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
Notes : 1. VDS = -50V 2. 250 Pulse Test s
10
-2
10
-1
10
0
10
1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
12
RDS(on) [], Drain-Source On-Resistance
VGS = - 10V VGS = - 20V
-I DR , Reverse Drain Current [A]
10
8
10
0
6
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
4
0
1
2
3
4
5
6
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
600
500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = -80V VDS = -200V
400
-V GS , Gate-Source Voltage [V]
Capacitance [pF]
Ciss
8
VDS = -320V
300
6
Coss
200
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
Crss
100
2
Note : ID = -2.0 A
0 -1 10
10
0
10
1
0
0
2
4
6
8
10
12
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
FQB2P40 / FQI2P40
Typical Characteristics
(Continued)
1.2
2.5
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
Notes : 1. VGS = -10 V 2. ID = -1.0 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
2.0
Operation in This Area is Limited by R DS(on)
10
1
1.6
-I D, Drain Current [A]
10 ms
10
0
-I D, Drain Current [A]
1 ms
100 µs
1.2
DC
0.8
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.4
10
-2
10
0
10
1
10
2
10
3
0.0 25
50
75
100
125
150
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C( t) = 1 .9 8 /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z J C( t)
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
FQB2P40 / FQI2P40
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
td(on)
t on tr td(off )
t off tf
VGS
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG -10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
VDD DUT
VDD ID (t) IAS BVDSS
©2000 Fairchild Semiconductor International
Rev. A2, December 2000
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