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Details, datasheet, quote on part number:FQB32N20C
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Datasheet text preview:
FQB32N20C/FQI32N20C
QFET
FQB32N20C/FQI32N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
®
Features
· · · · · · 28A, 200V, RDS(on) = 0.082 @VGS = 10 V Low gate charge ( typical 82.5 nC) Low Crss ( typical 185 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
G
S
D2-PAK
FQB Series
I2-PAK
GDS
FQI Series
G
S
Absolute Maximum Ratings
Symb ol VDSS ID ID M VG S S EAS IA R EAR dv/dt PD T J, T S T G TL
TC = 25°C unless otherwise noted
Param e ter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB32N20C / FQI32N20C 200 28.0 17.8 112 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V /ns W W W /°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
955 28.0 15.6 5.5 3.13 156 1 .25 -55 to +150 300
Thermal Characteristics
Symbol RJC RJA RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient* Thermal Resistance, Junction-to-Ambient Typ ---Max 0.8 40 62.5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2004 Fairchild Semiconductor Corporation Rev. A, March 2004
FQB32N20C/FQI32N20C
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
M in
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ ID S S IG S S F IG S S R Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.24 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gF S Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 14 A VDS = 40 V, ID = 14 A
(Note 4)
2.0 ---
-0 . 068 20
4. 0 0.082 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1700 400 185 2220 520 245 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg s Qg d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 32 A, VGS = 10 V
(Note 4, 5)
VDD = 100 V, ID = 32 A, RG = 25
(Note 4, 5)
--------
25 270 245 210 82.5 10.5 44.5
60 550 500 430 110 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS IS M VSD trr Qr r Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 28 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 32 A, dIF / dt = 100 A/µs
(Note 4)
------
---265 2.73
28 112 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.4mH, IAS = 32A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 28A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQB32N20C/FQI32N20C
Typical Characteristics
10
2
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
150 C
o
10
1
25 C
10
0
o
-55 C
o
Notes : 1. 250µ s Pulse Test 2. TC = 25
10 -1 10
0
10
0
10
1
10
-1
Notes : 1. VDS = 40V 2. 250µ s Pulse Test
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.3
10
2
RDS(ON) [ ], Drain-Source On-Resistance
0.2
IDR, Reverse Drain Current [A]
10
1
VGS = 10V
150
10
0
0.1
25
VGS = 20V
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
20
40
60
80
100
10
-1
0.0
0.4
0.8
1.2
1.6
2.0
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
6000
VGS, Gate-Source Voltage [V]
5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = 40V VDS = 100V VDS = 160V
Capacitance [pF]
4000
8
Ciss
3000
Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
0 1
6
2000
4
1000
2
Note : ID = 32.0A
0 -1 10
0
10
10
0
20
40
60
80
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQB32N20C/FQI32N20C
Typical Characteristics (Continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 14 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 µA
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
30
Figure 8. On-Resistance Variation vs Temperature
Operation in This Area is Limited by R DS(on)
10
2
25
ID, Drain Current [A]
ID, Drain Current [A]
100 µs 1 ms
10
1
20
10 ms DC
15
10
10
0
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
5
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
10
0
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C ( t ) = 0 . 8 0 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z JC ( t)
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQB32N20C/FQI32N20C
Gate Charge Test Circuit & Waveform
5 0 K 12V 200n F 300n F
Same Type as DUT VDS
VGS 10V Qg s Qg
VGS
Qg d
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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