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Details, datasheet, quote on part number:FQB33N10
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| Part: | FQB33N10 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 100V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQB33N10 datasheet File size : 599 kB |
| Request For quote: | Find where to buy FQB33N10
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Datasheet text preview:
FQB33N10 / FQI33N10
April 2000
FQB33N10 / FQI33N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol. D
QFET
Features
· · · · · · · 33A, 100V, RDS(on) = 0.052 @VGS = 10 V Low gate charge ( typical 38 nC) Low Crss ( typical 62 pF) Fast switching. 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
TM
D
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G
S
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D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB33N10 / FQI33N10 100 33 23 132 ±25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
435 33 12.7 6. 0 3.75 127 0.85 -55 to +175 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 1. 18 40 62. 5 Units °CW °CW °CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB33N10 / FQI33N10
Electrical CharacteristicsT
Symbol P a r a m e te r
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0.11 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 16.5 A VDS = 40 V, ID = 16.5 A
(Note 4)
2.0 ---
-0. 040 22
4. 0 0. 052 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---1150 320 62 15 00 420 80 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 33 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 33 A, RG = 25
(Note 4, 5)
--------
15 195 80 110 38 7. 5 18
40 400 170 230 51 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 33 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 33 A, dIF / dt = 100 A/µs
(Note 4)
------
---80 0.22
33 132 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.6mH, IAS = 33A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 33A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB33N10 / FQI33N10
Typical Characteristics
10
2
ID, Drain Current [A]
10
1
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175 25 -55
Notes : 1. VDS = 40V 2. 250 Pulse Test s
10
0
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
10
2
0.15
Drain-Source On-Resistance
VGS = 10V
0.10
VGS = 20V
IDR, Reverse Drain Current [A]
R DS(ON) [ ],
10
1
0.05
Note : TJ = 25
175
0
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.00 0 20 40 60 80 100 120
10
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
3000
2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 50V VDS = 80V
V GS , Gate-Source Voltage [V]
2000
Ciss Coss
8
Capacitance [pF]
1500
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
1000
4
Crss
500
2
Note : ID = 33A
0
0 -1 10
0
5
10
15
20
25
30
35
40
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB33N10 / FQI33N10
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 16.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Tem erature [ C] p
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
35
Oper ation in This Area is Limited by R DS(on)
2
30 25
10
1 ms 10 ms
10
1
ID , Drain Current [A]
ID , Drain Current [A]
100 µs
20 15 10 5 0 25
DC
Notes : 1. TC = 25 C
o
10
0
2. TJ = 175 C 3. Single Pulse
0
o
10
10
1
10
2
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5
0 .2 0 .1
10
-1
N otes : 1 . Z J C( t ) = 1 . 1 8 / W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
10
-2
P DM t1 t2
Z
JC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQB33N10 / FQI33N10
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3 mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VD D
VD S
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) V DD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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