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Details, datasheet, quote on part number:FQB44N10
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| Part: | FQB44N10 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 100V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQB44N10 datasheet File size : 655 kB |
| Request For quote: | Find where to buy FQB44N10
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Datasheet text preview:
FQB44N10 / FQI44N10
June 2000
FQB44N10 / FQI44N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol. D
QFET
Features
· · · · · · · 43.5A, 100V, RDS(on) = 0.039 @VGS = 10 V Low gate charge ( typical 48 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
TM
D
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G
S
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB44N10 / FQI44N10 100 43.5 30.8 174 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
530 43.5 14.6 6. 0 3.75 146 0.97 -55 to +175 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 1. 03 40 62. 5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQB44N10 / FQI44N10
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0. 1 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 21.75 A VDS = 40 V, ID = 21.75 A
(Note 4)
2.0 ---
-0.03 30
4. 0 0. 039 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---140 0 425 85 18 00 550 110 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 43.5 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 43.5 A, RG = 25
(Note 4, 5)
--------
19 190 90 100 48 9. 0 24
45 390 190 210 62 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 43.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 43.5 A, dIF / dt = 100 A/µs
(Note 4)
------
---98 360
43.5 174 1. 5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.42mH, IAS = 43.5A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 43.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQB44N10 / FQI44N10
Typical Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175
10
1
25 10
0
-55
Notes : 1. VDS = 40V 2. 250 Pulse Test s
Notes : 1. 250 Pulse Test s 2. TC = 25
10 -1 10
0
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.15 10
2
0.09
VGS = 10V VGS = 20V
IDR , Reverse Drain Current [A]
RDS(on) [], Drain-Source On-Resistance
0.12
10
1
0.06
10
0
0.03
Note : TJ = 25
175 10
-1
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.00
0
30
60
90
120
150
180
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
4000 3500 3000 2500 2000 1500 1000 500 0 -1 10
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 50V VDS = 80V
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
Ciss Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 43.5A
10
0
10
1
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQB44N10 / FQI44N10
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V A 2. ID = 250
0.5
Notes : 1. VGS = 10 V 2. ID = 21.75 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
50 10
3
Operation in This Area is Limited by R DS(on)
40
10
2
ID, Drain Current [A]
1 ms 10 ms
10
1
ID, Drain Current [A]
100 µs
30
DC
20
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C( t) = 1 .0 3 / W M a x . 2 . D u ty F a c to r , D = t1/t 2 3 . T J M - T C = P D M * Z J C( t)
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, June 2000
FQB44N10 / FQI44N10
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A, June 2000
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