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Details, datasheet, quote on part number:FQD8P10
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| Part: | FQD8P10 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 100V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQD8P10 datasheet File size : 678 kB |
| Request For quote: | Find where to buy FQD8P10
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Datasheet text preview:
FQD8P10 / FQU8P10
QFET
FQD8P10 / FQU8P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol.
TM
Features
· · · · · · -6.6A, -100V, RDS(on) = 0.53 @VGS = -10 V Low gate charge ( typical 12 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
G
S
D-PAK
FQD Series
I-PAK
GDS
FQU Series
G S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD8P10 / FQU8P10 -100 -6. 6 -4. 2 -26. 4 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
150 -6. 6 4. 4 -6. 0 2. 5 44 0.35 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 2. 84 50 110 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation Rev. B, August 2002
FQD8P10 / FQU8P10
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
U n i ts
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -3.3 A VDS = -40 V, ID = -3.3 A
(Note 4)
-2. 0 ---
-0. 41 4.1
-4. 0 0. 53 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---360 120 30 470 155 40 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -80 V, ID = -8.0 A, VGS = -10 V
(Note 4, 5)
VDD = -50 V, ID = -8.0 A, RG = 25
(Note 4, 5)
--------
11 110 20 35 12 3.0 6.4
30 230 50 80 15 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -6.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -8.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---98 0. 35
-6 . 6 -26.4 -4. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 5.2mH, IAS = -6.6A, VDD = -25V, RG = 25 , Starting TJ = 25°C 3. ISD -8.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQD8P10 / FQU8P10
Typical Characteristics
10
1
10
0
-I D , Drain Current [A]
-I D, Drain Current [A]
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top :
10
1
150
10
0
10
-1
25 -55
Notes : 1. VDS = -40V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
RDS(on) [], Drain-Source On-Resistance
1.2
VGS = - 10V
10
1
0.9
VGS = - 20V
-I DR , Reverse Drain Current [A]
0.6
10
0
0.3
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
900 800 700 600
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = -20V VDS = -50V VDS = -80V
-V GS , Gate-Source Voltage [V]
Notes : 1. VGS = 0 V 2. f = 1 MHz
8
Capacitance [pF]
500 400 300 200 100 0 -1 10
6
Crss
4
2
Note : ID = -8.0 A
10
0
10
1
0
0
2
4
6
8
10
12
14
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQD8P10 / FQU8P10
Typical Characteristics
(Continued)
1.2
3.0
2.5
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = -10 V 2. ID = -3.3 A
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
10
2
7
Operation in This Area is Limited by R DS(on)
6
100 µs
5
-I D, Drain Current [A]
10
1
1 ms 10 ms DC
-I D, Drain Current [A]
4 3 2 1 0 25
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
0
10
1
10
2
50
75
100
125
150
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1 . Z J C( t) = 2 .8 4 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z J C( t)
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
JC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQD8P10 / FQU8P10
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
td( on)
t on tr td( of f)
t off tf
VGS
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG -10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
VDD DUT
VDD ID (t) IAS BVDSS
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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