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Details, datasheet, quote on part number:FQE10N20C
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FQE10N20C
QFET
FQE10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
®
Features
· · · · · · 4.0A, 200V, RDS(on) = 0.36 @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G!
TO-126
GD S
FQE Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQE10N20C 200 4. 0 2. 5 16 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
320 4. 0 1.28 5. 5 12.8 0.10 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --M ax 9.8 62. 5 Units °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQE10N20C
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.28 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A VDS = 40 V, ID = 2.0 A
(Note 4)
2.0 ---
-0.29 4. 5
4. 0 0.36 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---395 97 40.5 510 125 53 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 9.5 A, VGS = 10 V
(Note 4, 5)
VDD = 100 V, ID = 9.5 A, RG = 25
(Note 4, 5)
--------
11 92 70 72 20 3. 1 10.5
30 190 150 160 26 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs
(Note 4)
------
---158 0.97
4. 0 16 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 30mH, IAS = 4.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQE10N20C
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
150 C
o
25 C
10
0
o
10
0
-55 C
o
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.5
RDS(ON) [ ], Drain-Source On-Resistance
10 1.0
1
VGS = 10V
IDR , Reverse Drain Current [A]
0.5
VGS = 20V
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0
0
5
10
15
20
25
30
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1200
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 40V VDS = 100V VDS = 160V
800
VGS , Gate-Source Voltage [V]
Capacitances [pF]
Ciss Coss
8
600
6
400
Crss
4
200
Note ; 1. VGS = 0 V 2. f = 1 MHz
0 1
2
Note : ID = 9.5A
0 -1 10
0
10
10
0
4
8
12
16
20
24
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev.B, January 2004
FQE10N20C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 2.0 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
2
Figure 8. On-Resistance Variation vs Temperature
10
5
Operation in This Area is Limited by R DS(on)
10
1
4
100 µs 1 ms 10 ms
ID, Drain Current [A]
ID, Drain Current [A]
3
10
0
DC
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
2
10
-1
1
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
( t) , T h e r m a l R e s p o n s e
10
1
D = 0 .5 0 .2
10
0
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z JC ( t) = 9 .8 / W M a x . 2 . D u ty F a c to r , D = t1 / t2 3 . T JM - T C = P D M * Z JC ( t)
10
-1
s i n g le p u l s e
P DM t1 t2
Z
10
-2
J C
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t 1 , S q u a r e W a v e P u ls e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
FQE10N20C
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2004 Fairchild Semiconductor Corporation
Rev. B, January 2004
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