|
Details, datasheet, quote on part number:FQE10N20LC
| |
Datasheet text preview:
FQE10N20LC
QFET
FQE10N20LC
200V Logic N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
®
Features
· · · · · · 4.0A, 200V, RDS(on) = 0.36 @VGS = 10 V Low gate charge ( typical 14.5 nC) Low Crss ( typical 44.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G
TO-126
GDS
FQE Series
S
Absolute Maximum Ratings
Symbol VDSS ID ID M VG S S EAS IA R EAR dv/dt PD T J, T S T G TL
TC = 25°C unless otherwise noted
Param eter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQE10N20LC 20 0 4 2.5 16 ± 20
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V /ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
32 0 4 1.28 5.5 12.8 0.10 -55 to +150 30 0
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 9.8 62.5 Units °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQE10N20LC
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
M in
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ ID S S IG S S F IG S S R Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V 200 ------0.28 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gF S Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.0 A VGS = 5 V, ID = 2.0 A VDS = 30 V, ID = 2.0 A
(Note 4)
1.0 ---
-0.29 0.32 5. 2
2. 0 0.36 0.39 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---375 102 45.5 490 135 60 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg s Qg d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 9.5 A, VGS = 5 V
(Note 4, 5)
VDD = 100 V, ID = 9.5 A, RG = 25
(Note 4, 5)
--------
16.5 220 80 110 14.5 1.6 9.5
45 450 170 230 19 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS IS M VSD trr Qr r Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs
(Note 4)
------
---163 0.89
4.0 16 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 30mH, IAS = 4.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 9.5A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQE10N20LC
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 10.0 V 8.0 V 5.0 V 4.5 V 4.0 V 3.5 V 3.0 V Bottom : 2.5 V Top :
10
1
150 C
o
10
0
10
0
25 C
o
-55 C
o
Notes : 1. 250µ s Pulse Test 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
Notes : 1. VDS = 30V 2. 250µ s Pulse Test
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
10
1
RDS(ON) [ ], Drain-Source On-Resistance
0.8
0.6
VGS = 5V
IDR, Reverse Drain Current [A]
10
0
0.4
VGS = 10V
0.2
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
5
10
15
20
25
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1400 1200 1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VGS, Gate-Source Voltage [V]
10
VDS = 40V VDS = 100V VDS = 160V
Capacitance [pF]
8
800 600 400 200 0 -1 10
Notes : 1. VGS = 0 V 2. f = 1 MHz
0
Ciss Coss Crss
6
4
2
Note : ID = 9.5A
10
10
1
0
0
4
8
12
16
20
24
28
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQE10N20LC
Typical Characteristics (Continued)
1.2
2.5
BVDSS, (Normalized) Drain-Source Breakdown Voltage
RDS(ON), (Normalized) Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 µA
0.5
Notes : 1. VGS = 10 V 2. ID = 2 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
2
Figure 8. On-Resistance Variation vs Temperature
10
5
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
ID, Drain Current [A]
10
1
4
100 µs 10 ms 1 ms 100 ms DC
3
10
0
2
10
-1
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o
o
1
10
-2
10
0
10
1
10
2
0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs Case Temperature
10
1
D = 0 .5
ZJC(t), Thermal Response
0 .2
10
0
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C ( t ) = 9 . 8 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z JC ( t)
10
-1
s in g le p u ls e
PDM t1 t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11. Transient Thermal Response Curve
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQE10N20LC
Gate Charge Test Circuit & Waveform
5 0 K 12V 200n F 300n F
Same Type as DUT VDS
VGS 5V Qg s Qg
VGS
Qg d
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG 5V VGS
RL VDD
VDS
90%
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
|
|
