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Details, datasheet, quote on part number:FQG4902
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FQG4902
QFET
FQG4902
250V Dual N & P-Channel MOSFET
General Description
These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on half bridge.
TM
Features
· N-Channel 0.54A, 250V, RDS(on) = 2.0 @ VGS = 10 V P-Channel -0.54A, -250V, RDS(on) = 2.0 @ VGS = -10 V · Low gate charge ( typical N-Channel 6.0 nC) ( typical P-Channel 12.0 nC) · Fast switching · Improved dv/dt capability
D2 D2 D1 D1 G2 S2 G1 S1 Pin #1
5
4
6
3
7
2
8-DIP
8
1
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS dv/dt PD TJ, TSTG
TA = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TA = 25°C) Drain Current - Continuous (TA = 100°C) Drain Curent - Pulsed
(Note 1)
N -C h a n n e l 250 0.54 0.34 4.32 ± 30
(Note 2)
P-Channel -250 -0.54 -0.34 -4.32 -5 . 5
Units V A A A V V/ns W W/°C °C
Gate-Source Voltage Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) - Derate above 25°C Operating and Storage Temperature Range
5. 5 1. 4 0.011 -55 to +150
Thermal Characteristics
Symbol RJ A P a rameter Thermal Resistance, Junction-to-Ambient
(Note 5a)
Typ --
Max 90
Units °C/W
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
FQG4902
Electrical Characteristics
Symbol P a r a m e te r
TA = 25°C unless otherwise noted
Test Conditions
Type
Mi n
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient VGS = 0 V, ID = 250 µA VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 250 V, VGS = 0 V VDS = 200 V, TA = 125°C VDS = -250 V, VGS = 0 V VDS = -200 V, TA = 125°C IGSSF IGSSR Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V N-C h P- Ch N-C h P- Ch N-C h P-Ch All All 250 -250 ----------0.24 -0. 2 ----------10 100 -10 -100 100 -1 0 0 V V V/ °C V/ ° C µA µA µA µA nA nA
IDSS
Zero Gate Voltage Drain Current
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA VGS = 10 V, ID = 0.27 A VGS = -10 V, ID = -0.27 A VDS = 40 V, ID = 0.27 A VDS = -40 V, ID = -0.27 A N-C h P- Ch N-C h P- C h N-C h P-Ch 2.0 -2. 0 ------1.1 1. 5 1.3 1. 1 4. 0 -4. 0 2.0 2. 0 --V V S S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance N-C hannel VDS = 25 V, VGS = 0 V, f = 1.0 MHz P -C h a n n e l VDS = -25 V, VGS = 0 V, f = 1.0 MHz N-C h P- Ch N -C h P- Ch N -C h P- Ch ------195 345 40 65 7 11 250 445 55 85 9. 5 14.5 pF pF pF pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge N-C hannel VDD = 125 V, ID = 0.54 A, RG = 25 P -C h a n n e l VDD = -125 V, ID = -0.54 A, RG = 25
(Note 3,4)
N-C hannel VDS = 200 V, ID = 0.54 A, VGS = 10 V P -C h a n n e l VDS = -200 V, ID = -0.54 A, (Note 3,4) VGS = -10 V
N-C h P- C h N-C h P- Ch N -C h P- Ch N -C h P- Ch N-C h P- Ch N-C h P- C h N-C h P- C h
---------------
5.5 8. 0 17 19 29 44 23 33 6. 0 12.0 1. 1 2. 2 2. 7 5. 3
20 25 45 50 70 100 55 75 7. 8 15.6 -----
ns ns ns ns ns ns ns ns nC nC nC nC nC nC
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
FQG4902
Electrical Characteristics (Continued)
Symbol P a r a m e te r Test Conditions Type Mi n Typ Ma x Units
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 0.54 A VGS = 0 V, IS = -0.54 A VGS = 0 V, IS = 0.54 A, (Note 3) dIF / dt = 100 A/µs VGS = 0 V, IS = -0.54 A, (Note 3) dIF / dt = 100 A/µs N-Ch P -C h N-Ch P -C h N-Ch P-Ch N-Ch P -C h ----------------90 189 77 210 0.54 -0.54 4.32 -4.32 1.5 -5. 0 ----A A A A V V ns nC ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. ISD 0.54A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 3. Pulse Test : Pulse width 300µs, Duty cycle 2% 4. Essentially independent of operating temperature 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance. RCA is determined by the user's board design Maximum RJA using the different board layouts on 3"x4.5" FR-4 PCB in a still air environment : a. 90°C/W when mounted without any pad copper b. 62.5°C/W when mounted on a 4.5 in2 pad of 2oz copper. In such an environment, the power dissipation can be enhanced up to 2W
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
FQG4902
Typical Characteristics : N-Channel
ID , Drain Current [A]
ID, Drain Current [A]
10
0
VGS 15.0 V 10.0 V 8.0 V 6.0 V 5.5 V 5.0 V 4.5 V Bottom : 4.0 V Top :
10
0
150 25 -55
10
-1
Notes : 1. 250 s Pulse Test 2. TA = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
10
-1
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
8
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 10V
6
IDR, Reverse Drain Current [A]
10
0
VGS = 20V
4
2
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0
0
2
4
6
8
10
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
12
400
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 50V
10
VDS = 125V VDS = 200V
VGS, Gate-Source Voltage [V]
300
Ciss Coss
8
Capacitance [pF]
200
6
100
Crss
4
Notes : 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 0.54 A
0 -1 10
10
0
10
1
0
0
2
4
6
8
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
FQG4902
Typical Characteristics : N-Channel (Continued)
1.2
2.5
2.0
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 0.27 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
0.6
Operation in This Area is Limited by R DS(on)
Figure 8. On-Resistance Variation vs. Temperature
10
1
10
0
10
-1
DC
10
-2
Notes : 1. TA = 25 C o 2. TJ = 150 C 3. Single Pulse
o
10
-3
10
0
10
1
10
2
ID, Drain Current [A]
ID, Drain Current [A]
100 s 1 ms 10 ms 100 ms 1s
0.4
0.2
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TA, Ambient Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Ambient Temperature
Z (t), T h e rm a l R e s p o n s e
10
2
D = 0 .5 0 .2
10
1
0 .1 0 .0 5 0 .0 2
PDM t1 t2
J A
10
0
0 .0 1 s in g le p u ls e
N o te s : 1 . Z JA ( t) = 9 0 /W M a x . 2 . D u t y F a c to r , D = t 1/t2 3 . T JM - T A = P D M * Z JA ( t)
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. A1, April 2002
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