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Details, datasheet, quote on part number:FQH70N10
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FQH70N10
QFET
FQH70N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol.
®
Features
· · · · · · · 70A, 100V, RDS(on) = 0.023 @VGS = 10 V Low gate charge ( typical 85 nC) Low Crss ( typical 150 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-247
FQH Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
F Q H70N10 100 70 49.5 280 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
1300 70 21.4 6. 0 214 1.43 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0. 24 -M ax 0.7 -40 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH70N10
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0. 1 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 35 A VDS = 40 V, ID = 35 A
(Note 4)
2.0 ---
-0. 019 48
4. 0 0. 023 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---250 0 720 150 33 00 940 200 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 70 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 70 A, RG = 25
(Note 4, 5)
--------
30 470 130 160 85 16 42
70 950 270 330 110 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 70 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 70 A, dIF / dt = 100 A/µs
(Note 4)
------
---110 430
70 280 1. 5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.4mH, IAS = 70A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 70A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH70N10
Typical Characteristics
10
2
ID, Drain Current [A]
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
2
10
1
175
10
1
25 10
0
-55
Notes : 1. VDS = 40V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10 -1 10
0
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
80 10 VGS = 10V 48 VGS = 20V 32
2
IDR , Reverse Drain Current [A]
RDS(ON) [m ], Drain-Source On-Resistance
64
10
1
10
0
16
Note : TJ = 25
175 10
-1
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0
0
60
120
180
240
300
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
ID , Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
7000 6000 5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 50V VDS = 80V
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
4000 3000 2000 1000 0 -1 10
Ciss Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
Crss
2
Note : ID = 70A
10
0
10
1
0
0
10
20
30
40
50
60
70
80
90
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH70N10
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 35 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
70 10
3
Operation in This Area is Limited by R DS(on)
60 50
ID, Drain Current [A]
1 ms 10 ms
10
1
ID, Drain Current [A]
10
2
100 µs
10 µs
40 30 20 10 0 25
DC
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
-1
10
0
10
1
10
2
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C( t) = 0 .7 /W M a x . 2 . D u ty F a c to r , D = t1 /t2 3 . T J M - T C = P D M * Z J C( t)
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQH70N10
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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