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Details, datasheet, quote on part number:FQI11P06
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| Part: | FQI11P06 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Enhancement P-Channel |
| Description: | 60V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQI11P06 datasheet File size : 677 kB |
| Request For quote: | Find where to buy FQI11P06
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Datasheet text preview:
FQB11P06 / FQI11P06
May 2001
QFET
FQB11P06 / FQI11P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. D G! G S
TM
Features
· · · · · · · -11.4A, -60V, RDS(on) = 0.175 @VGS = -10 V Low gate charge ( typical 13 nC) Low Crss ( typical 45 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
S
!
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB11P06 / FQI11P06 -60 -11.4 -8.05 -45. 6 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
160 -11.4 5. 3 -7. 0 3.13 53 0.35 -55 to +150 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 2. 85 40 62. 5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
R ev. A4. May 2001
FQB11P06 / FQI11P06
Elerical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150°C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V - 60 -------0 . 0 7 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -5.7 A VDS = -30 V, ID = -5.7 A
(Note 4)
-3. 0 ---
-0. 14 5.1
-5. 0 0.175 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---420 195 45 550 250 60 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -30 V, ID = -5.7 A, RG = 25
(Note 4, 5)
--------
6.5 40 15 45 13 2.0 6.3
25 90 40 100 17 ---
ns ns ns ns nC nC nC
VDS = -48 V, ID = -11.4 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.4 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -11.4 A, dIF / dt = 100 A/µs
(Note 4)
------
---83 0. 26
-11.4 -45.6 -4. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.44mH, IAS = -11.4A, VDD = -25V, RG = 25 , Starting TJ = 25°C 3. ISD -11.4A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
R ev. A4. May 2001
FQB11P06 / FQI11P06
Typical Characteristics
10
1
-I D , Drain Current [A]
-I D, Drain Current [A]
VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top :
10
1
175
10
0
10
0
25 -55
Notes : 1. VDS = -30V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
RDS(on) [], Drain-Source On-Resistance
VGS = - 10V 0.4 VGS = - 20V 0.2
Note : TJ = 25
-I DR , Reverse Drain Current [A]
0.6
10
1
10
0
175
-1
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.0
0
10
20
30
40
50
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1200
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
-V GS , Gate-Source Voltage [V]
VDS = -30V
8
800
Coss Ciss
Notes : 1. VGS = 0 V 2. f = 1 MHz
VDS = -48V
Capacitance [pF]
600
6
400
4
Crss
200
2
Note : ID = -11.4 A
0 -1 10
10
0
10
1
0
0
2
4
6
8
10
12
14
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
R ev. A4. May 2001
FQB11P06 / FQI11P06
Typical Characteristics
(Continued)
1.2
2.5
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
2.0
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
1.5
1.0
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
Notes : 1. VGS = -10 V 2. ID = -5.7 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
12 10
2
Operation in This Area is Limited by R DS(on)
10
100 µs
-I D, Drain Current [A]
1 ms
10
1
10 ms DC
-I D, Drain Current [A]
8
6
10
0
4
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
2
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
-VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1 . Z J C( t ) = 2 . 8 5 /W M a x . 2 . D u ty F a c t o r , D = t1 /t2 3 . T J M - T C = P D M * Z J C( t )
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
R ev. A4. May 2001
FQB11P06 / FQI11P06
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
td(on)
t on tr td(off )
t off tf
VGS
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG -10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
VDD DUT
VDD ID (t) IAS BVDSS
©2001 Fairchild Semiconductor Corporation
R ev. A4. May 2001
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