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Details, datasheet, quote on part number:FQI12P10
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| Part: | FQI12P10 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => DMOS (Double-diffused MOS) => Enhancement P-Channel |
| Description: | 100V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQI12P10 datasheet File size : 651 kB |
| Request For quote: | Find where to buy FQI12P10
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Datasheet text preview:
FQB12P10 / FQI12P10
QFET
FQB12P10 / FQI12P10
100V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol. D
TM
Features
· · · · · · · -11.5A, -100V, RDS(on) = 0.29 @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
D
G G S
D2-PAK
FQB Series
GDS
I2-PAK
FQI Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQB12P10 / FQI12P10 -100 -11.5 -8. 1 -46 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) *
370 -11.5 7. 5 -6. 0 3.75 75 0. 5 -55 to +175 300
TJ, TSTG TL
Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8! from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 2.0 40 62. 5 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQB12P10 / FQI12P10
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
U n i ts
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -100 V, VGS = 0 V VDS = -80 V, TC = 150°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -100 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -5.75 A VDS = -40 V, ID = -5.75 A
(Note 4)
-2. 0 ---
-0. 24 6.7
-4. 0 0. 29 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---620 220 65 800 290 85 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -50 V, ID = -11.5 A, RG = 25
(Note 4, 5)
--------
15 160 35 60 21 4.6 11.5
40 330 80 130 27 ---
ns ns ns ns nC nC nC
VDS = -80 V, ID = -11.5 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -11.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -11.5 A, dIF / dt = 100 A/µs
(Note 4)
------
---110 0. 47
-11.5 -46 -4. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 4.2mH, IAS = -11.5A, VDD = -25V, RG = 25 , Starting TJ = 25°C 3. ISD " -11.5A, di/dt " 300A/µs, VDD " BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width " 300µs, Duty cycle " 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQB12P10 / FQI12P10
Typical Characteristics
10
1
-I D , Drain Current [A]
-I D, Drain Current [A]
10
0
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.5 V -5.5 V -5.0 V Bottom : -4.5 V Top :
10
1
175!
10
0
25! -55!
" Notes : 1. VDS = -40V 2. 250# s Pulse Test
10
-1
" Notes : 1. 250# s Pulse Test 2. TC = 25!
10
-2
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8 VGS = - 10V
RDS(on) [], Drain-Source On-Resistance
VGS = - 20V 0.4
-I DR , Reverse Drain Current [A]
0.6
10
1
10
0
0.2
" Note : TJ = 25!
175!
25!
" Notes : 1. VGS = 0V 2. 250# s Pulse Test
0.0
0
10
20
30
40
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1600 1400 1200 1000 800 600 400 200 0 -1 10
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = -20V VDS = -50V VDS = -80V
-V GS , Gate-Source Voltage [V]
8
Capacitance [pF]
" Notes : 1. VGS = 0 V 2. f = 1 MHz
6
Crss
4
2
" Note : ID = -11.5 A
10
0
10
1
0
0
4
8
12
16
20
24
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQB12P10 / FQI12P10
Typical Characteristics
(Continued)
1.2
3.0
2.5
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
" Note : 1. VGS = -10 V 2. ID = -5.75 A
0.9
" Notes : 1. VGS = 0 V 2. ID = -250 # A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
12 10
2
Operation in This Area is Limited by R DS(on)
10
100 µs
-I D, Drain Current [A]
10
1
10 ms DC
-I D, Drain Current [A]
1 ms
8
6
10
0
4
" Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
2
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
-VDS, Drain-Source Voltage [V]
TC, Case Temperature [!]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1
" N o te s : 1 . Z $ J C( t ) = 2 . 0 ! /W M a x . 2 . D u ty F a c t o r , D = t1 /t2 3 . T J M - T C = P D M * Z $ J C( t )
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
$
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQB12P10 / FQI12P10
Gate Charge Test Circuit & Waveform
50K% 12 V 200nF 300 nF
Same Type as DUT VDS
VGS -10V Qgs Qg
VGS
Qgd
DUT
-3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
td( on)
t on tr td( of f)
t off tf
VGS
10%
-10V
DUT VDS
90%
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG -10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD
tp
Time VDS (t)
VDD DUT
VDD ID (t) IAS BVDSS
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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