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Details, datasheet, quote on part number:FQP13N10
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| Part: | FQP13N10 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | 100V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQP13N10 datasheet File size : 633 kB |
| Request For quote: | Find where to buy FQP13N10
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Datasheet text preview:
FQP13N10
January 2001
FQP13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control.
QFET QFET
Features
· · · · · · · 12.8A, 100V, RDS(on) = 0.18 @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
TM
D
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G
G! DS
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TO-220
FQP Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP13N10 100 12.8 9.05 51.2 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
95 12.8 6. 5 6. 0 65 0.43 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -M ax 2. 31 -62. 5 Units °C/W °C/W °C/W
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FQP13N10
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 ------0.09 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.4 A VDS = 40 V, ID = 6.4 A
(Note 4)
2.0 ---
-0. 142 6. 8
4. 0 0.18 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---345 100 20 450 130 25 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 80 V, ID = 12.8 A, VGS = 10 V
(Note 4, 5)
VDD = 50 V, ID = 12.8 A, RG = 25
(Note 4, 5)
--------
5 55 20 25 12 2. 5 5. 1
20 120 50 60 16 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.8 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 12.8 A, dIF / dt = 100 A/µs
(Note 4)
------
---72 0.17
12.8 51.2 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.87mH, IAS = 12.8A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 12.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FQP13N10
Typical Characteristics
10
1
ID, Drain Current [A]
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
175 10
0
10
0
25 -55
Notes : 1. VDS = 40V 2. 250 Pulse Test s
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
RDS(ON) [ ], Drain-Source On-Resistance
0.4
VGS = 20V
IDR , Reverse Drain Current [A]
0.6
VGS = 10V
10
1
10
0
0.2
175
10
-1
25
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.0
0
10
20
30
40
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
900
750
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 50V VDS = 80V
VGS, Gate-Source Voltage [V]
600
8
Capacitance [pF]
450
Ciss Coss
6
300
Notes :
4
150
Crss
1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 12.8A
0 -1 10
10
0
10
1
0
0
2
4
6
8
10
12
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FQP13N10
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V A 2. ID = 250
0.5
Notes : 1. VGS = 10 V 2. ID = 6.4 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
15 10
2
Operation in This Area is Limited by R DS(on)
12
100 µs
ID, Drain Current [A]
1 ms
10
1
ID, Drain Current [A]
10 ms DC
9
6
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
3
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C( t ) = 2 . 3 1 / W M a x . 2 . D u ty F a c to r , D = t1/t 2 3 . T J M - T C = P D M * Z J C( t)
10
-1
JC
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
FQP13N10
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A1, January 2001
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