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Details, datasheet, quote on part number:FQP13N50
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| Part: | FQP13N50 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | 500V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQP13N50 datasheet File size : 904 kB |
| Request For quote: | Find where to buy FQP13N50
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Datasheet text preview:
FQP13N50/FQPF13N50
QFET
FQP13N50/FQPF13N50
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
TM
Features
· · · · · · 12.5A, 500V, RDS(on) = 0.43 @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP13N50 500 12.5 7. 9 50 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
FQPF13N50 12. 5 * 7. 9 * 50 * 810 12. 5 17 4.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
170 1.35 -55 to +150 300
56 0. 45
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RJ C RC S Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink FQP13N50 0. 74 0.5 FQPF13N50 2. 23 -U n i ts °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
FQP13N50/FQPF13N50
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.48 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 6.25 A VDS = 50 V, ID = 6.25 A
(Note 4)
3.0 ---
-0.33 10
5. 0 0.43 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---180 0 245 25 23 00 320 35 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 250 V, ID = 13.4 A, RG = 25
(Note 4, 5)
--------
40 140 100 85 45 11 22
90 290 210 180 60 ---
ns ns ns ns nC nC nC
VDS = 400 V, ID = 13.4 A, VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 12.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 13.4 A, dIF / dt = 100 A/µs
(Note 4)
------
---290 2. 6
12.5 50 1. 4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 9.3mH, IAS = 12.5A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 13.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
FQP13N50/FQPF13N50
Typical Characteristics
ID , Drain Current [A]
ID , Drain Current [A]
10
1
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
150
25 10
0
-55
Notes : 1. VDS = 50V 2. 250 s Pulse Test
10
0
Notes : 1. 250 s Pulse Test 2. TC = 25
-1 0 1
10
-1
10
10
10
2
4
6
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.4 1.2
RDS(ON) [ ], Drain-Source On-Resistance
1.0 0.8 0.6 0.4 0.2
VGS = 10V VGS = 20V
IDR , Reverse Drain Current [A]
10
1
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
Note : TJ = 25
0.0
0
10
20
30
40
50
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
3500 3000 2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 100V
10
VDS = 250V VDS = 400V
VGS, Gate-Source Voltage [V]
Ciss Coss
8
Capacitance [pF]
2000 1500 1000 500 0 -1 10
6
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 13.4 A
0
10
0
10
1
0
5
10
15
20
25
30
35
40
45
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
FQP13N50/FQPF13N50
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 6.7 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
10
2
Operation in This Area is Limited by R DS(on)
10
2
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
100 µs
10
1
10 µs
10 ms DC
ID, Drain Current [A]
1 ms
10
1
10 µs 100 µs 1 ms 10 ms 100 ms DC
10
0
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP13N50
Figure 9-2. Maximum Safe Operating Area for FQPF13N50
15
12
ID, Drain Current [A]
9
6
3
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
FQP13N50/FQPF13N50
Typical Characteristics
(Continued)
10
0
(t), T h e rm a l R e s p o n s e
D = 0 .5
0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z J C( t) = 0 .7 4 / W M a x . 2 . D u ty F a c to r , D = t 1/t2 3 . T J M - T C = P D M * Z J C( t)
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP13N50
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1
N o te s : 1 . Z J C( t) = 2 .2 3 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z J C( t )
10
-1
0 .0 5 0 .0 2 0 .0 1
P DM t1 t2
Z
JC
10
-2
s in g le p u ls e
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve for FQPF13N50
©2002 Fairchild Semiconductor Corporation
Rev. B, September 2002
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