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Details, datasheet, quote on part number:FQP15P12
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FQP15P12/FQPF15P12
QFET
FQP15P12/FQPF15P12
120V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor cont rol.
®
Features
· · · · · · · -15A, -120V, RDS(on) = 0.2 @VGS = -10 V Low gate charge ( typical 29 nC) Low Crss ( typical 110 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
S
!
G!
GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP15P12 -120 -15 -10. 6 -60 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
F Q PF 15P 12 -1 5 * -10.6 * -6 0 * 1157 -15 10 -5. 0
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
100 0. 67 -55 to +175 300
41 0.27
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RJ C RJ S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP15P12 1.5 40 62. 5 F Q PF 15P12 3.66 -62.5 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQP15P12/FQPF15P12
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = -250 µA, Referenced to 25°C VDS = -120 V, VGS = 0 V VDS = -96 V, TC = 150°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V
-120
--0.13 -----
---1 - 10 -100 100
V V/°C µA µA nA nA
------
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -7.5 A VDS = -40 V, ID = -7.5 A
(Note 4)
-2.0 ---
-0.17 9. 5
-4. 0 0. 2 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---850 310 110 1100 400 140 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -96 V, ID = -15 A, VGS = -10 V
(Note 4, 5)
VDD = -60 V, ID = -15 A, RG = 25
(Note 4, 5)
--------
15 100 80 80 29 5. 1 15
40 210 170 170 38 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -15 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -15 A, dIF / dt = 100 A/µs
(Note 4)
------
---126 0.61
- 15 - 60 -4. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 6.0mH, IAS = -15A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD -15A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQP15P12/FQPF15P12
Typical Characteristics
10
2
-ID, Drain Current [A]
-I D, Drain Current [A]
10
1
VGS -15.0 V -10.0 V -8.0 V -7.0 V -6.0 V -5.5 V -5.0 V Bottom : -4.5 V Top :
10
2
10
1
175 C 25 C
o
o
10
0
10
0
-55 C
Notes : 1. VDS = -40V 2. 250 s Pulse Test
o
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS, Drain-Source Voltage [V]
-VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0 0.9 0.8
RDS(ON) [ ], Drain-Source On-Resistance
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40
Note : TJ = 25
VGS = -10V
-I DR , Reverse Drain Current [A]
10
1
175 25
10
0
VGS = -20V
Notes : 1. VGS = 0V 2. 250 s Pulse Test
60
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-ID, Drain Current [A]
-VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
2200 2000 1800 1600
12
Coss Ciss
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
10
VDS = -30V VDS = -60V
-V GS , Gate-Source Voltage [V]
Capacitance [pF]
1400 1200 1000 800 600 400 200 0 -1 10 10
0
8
VDS = -96V
Notes ; 1. VGS = 0 V 2. f = 1 MHz
6
Crss
4
2
Note : ID = -15A
10
1
0
0
10
20
30
40
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQP15P12/FQPF15P12
Typical Characteristics
(Continued)
1.2
3.0
2.5
-BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = -10 V 2. ID = -7.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = -250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
2
Operation in This Area is Limited by R DS(on) 100 µs
10
2
Operation in This Area is Limited by R DS(on)
-I D, Drain Current [A]
-I D, Drain Current [A]
1 ms
100 µs
10
1
10 ms DC
10
1
1 ms 10 ms DC
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
-VDS, Drain-Source Voltage [V]
-VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP15P12
Figure 9-2. Maximum Safe Operating Area for FQPF15P12
20
15
-I D, Drain Current [A]
10
5
0 25
50
75
100
125
150
175
TC, Case Temperature []
Figure 10. Maximum Drain Current vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FQP15P12/FQPF15P12
Typical Characteristics
(Continued)
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5 0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
N o te s : 1 . Z JC t) = 1 .5 /W M a x . ( 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z J C t ) (
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP15P12
Z ( t ) , T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
N o te s : ( 1 . Z JC t) = 3 .6 6 /W M a x. 2 . D u ty F a c to r , D = t1 /t2 3 . T JM - T C = P D M * Z J C t ) (
10
-1
0 .0 2 0 .0 1
JC
P DM
s in g le p u ls e
t1
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
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