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Details, datasheet, quote on part number:FQP18N20V2
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FQP18N20V2/FQPF18N20V2
QFET
FQP18N20V2/FQPF18N20V2
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor cont rol.
TM
Features
· · · · · · 18A, 200V, RDS(on) = 0.14 @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 25 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parame ter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP18N20V2 18 11.9 72
FQPF18N20V2 200 18 11.9 72 ± 30 340 18 12. 3 6.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
123 0. 99 -55 to +150 300
40 0. 32
Thermal Characteristics
Symbol RJ C RC S RJ A Parame ter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP18N20V2 1.01 0. 5 62.5 FQPF18N20V2 3. 1 -62. 5 Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0. 25 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9 A VDS = 40 V, ID = 9 A
(Note 4)
3. 0 ---
-0. 12 11
5.0 0. 14 --
V S
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 160 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 160 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----830 200 25 70 135 1080 260 33 --pF pF pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 18 A, VGS = 10 V
(Note 4, 5)
VDD = 100 V, ID = 18 A, RG = 25
(Note 4, 5)
--------
16 133 38 62 20 5.6 10
40 275 85 135 26 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 18 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs
(Note 4)
------
---158 1.0
18 72 1.5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.58mH, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 18A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
VG S Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V Bottom : 5.5 V 6.5 V
10
1
ID, Drain Current [A]
ID , Drain Current [A]
10
1
150
10
0
25 -55 10
0
Notes :
10
-1
1. 250 s Pulse Test 2. TC = 25
-1 0 1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
10
10
VDS, Drain-Source Voltage [V]
10
-1
4
5
6
7
8
9
10
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.5
Drain-Source On-Resistance
0.4
VGS = 10V
IDR , Reverse Drain Current [A]
10
1
R DS(ON) [ ],
0.3
VGS = 20V
0.2
10
0
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.1
Note : TJ = 25
0.0 0 10 20 30 40 50 60
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
2500
Ciss = C gs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = C gd
12
VDS = 40V
10
2000
VDS = 100V VDS = 160V
VGS , Gate-Source Voltage [V]
Capacitance [pF]
1500
Notes : 1. VGS = 0 V 2. f = 1 MHz
8
6
1000
Ciss Coss
4
500
Crss
2
Note : ID = 18A
0 -1 10
10
0
10
1
0
VDS, Drain-Source Voltage [V]
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
(Continued)
1.2
3.0
BV DSS , (Normalized) Drain-Source Breakdown Voltage
2.5
1.1
Drain-Source On-Resistance
R DS(ON) , (Normalized)
2.0
1.0
1.5
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
1.0
Notes : 1. VG S = 10 V 2. ID = 9 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation
10
2
Operation in This Area is Limited by R DS(on)
Operation in This Area
10
2
is Limited by R DS(on)
100 us
100 us
ID , Drain Current [A]
ID, Drain Current [A]
1 ms
10
1
1 ms
10
1
10 ms DC
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10 ms 100 ms DC
10
0
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
-1
10
0
0
10
1
10
2
10
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP18N20V2
Figure 9-2. Maxiumum Safe Operating Area for FQPF18N20V2
20
15
ID, Drain Current [A]
10
5
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N20V2/FQPF18N20V2
Typical Characteristics
(Continued)
(t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5 0 .2
10
-1
N o te s : 1. Z
JC
(t) = 1 .0 1 /W M a x .
0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
2 . D u ty F a c to r, D = t1 /t2 3. T
JM
-T
C
=P
DM
*Z
JC
(t)
JC
P DM t1 t2
10
0
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t1 , S q u a r e W a v e P u ls e D u r a t io n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP18N20V2
( t), T h e r m a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1. Z
JC
(t) = 3 .1 /W M a x .
2 . D u ty F a c to r, D = t1 /t2 3. T
JM
0 .0 2 0 .0 1
-T
C
=P
DM
*Z
JC
(t)
P DM
s in g le p u ls e
JC
t1
Z
t2
10
0
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF18N20V2
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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