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Details, datasheet, quote on part number:FQP18N50V2
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FQP18N50V2/FQPF18N50V2
QFET
FQP18N50V2/FQPF18N50V2
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology.
TM
Features
· · · · · · 18A, 500V, RDS(on) = 0.265 @VGS = 10 V Low gate charge ( typical 42 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parame ter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP18N50V2 18 12. 1 72
FQPF18N50V2 500 18 12. 1 72 ± 30 330 18 25 4.5
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
208 1. 67 -55 to +150 300
69 0. 55
Thermal Characteristics
Symbol RJ C RC S RJ A Parame ter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FQP18N50V2 0. 6 0. 5 62.5 FQPF18N50V2 1. 8 -62. 5 Units °C/W °C/W °C/W
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 500 V, VGS = 0 V VDS = 400 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 500 ------0.5 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9 A VDS = 40 V, ID = 9 A
(Note 4)
3. 0 ---
-0.225 16
5.0 0.265 --
V S
Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 400 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 400 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----2530 300 11 76 150 3290 390 14. 3 --pF pF pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 400 V, ID = 18 A, VGS = 10 V
(Note 4, 5)
VDD = 250 V, ID = 18 A, RG = 25
(Note 4, 5)
--------
40 150 95 110 42 12 14
90 310 200 230 55 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 18 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 18 A, dIF / dt = 100 A/µs
(Note 4)
------
---420 5.4
18 72 1.4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.83mH, IAS = 18A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 18A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
Typical Characteristics
VG S Top : 15.0 V 10.0 V 8.0 V
1
10
7.0 V 6.0 V Bottom : 5.5 V
ID, Drain Current [A]
ID , Drain Current [A]
6.5 V
10
1
150
25 10
0
10
0
-55
Notes : 1. 250 s Pulse Test 2. TC = 25
10
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-1
10
0
10
1
10
-1
VDS, Drain-Source Voltage [V]
2
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
1.0
Drain-Source On-Resistance
IDR , Reverse Drain Current [A]
0.8
R DS(ON) [ ],
10
1
0.6
V GS = 10V
0.4
VGS = 20V
0.2
Note : TJ = 25
10
0
150
25
0.0 0 10 20 30 40 50 60 70
Notes : 1. VGS = 0V 2. 250 s Pulse Test
10
-1
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
7000
C iss = C gs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = C gd
12
6000 5000
VDS = 100V
10
VDS = 250V VDS = 400V
V GS , Gate-Source Voltage [V]
8
Capacitance [pF]
4000 3000
6
Ciss Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
2000 1000
4
2
Note : ID = 18A
Crss
0 -1 10 10
0
10
1
0 0 5 10 15 20 25 30 35 40 45
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
Typical Characteristics
(Continued)
1.2
3.0
BV DSS , (Normalized) Drain-Source Breakdown Voltage
R DS(ON) , (Normalized)
1.1
Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 9 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
Operation in This Area
Operation in This Area
10
2
is Limited by R DS(on)
10
2
is Limited by R DS(on)
ID , Drain Current [A]
ID , Drain Current [A]
100 us 1 ms
10
1
100 us
10
1
1 ms 10 ms 100 ms DC
10 ms DC
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
0
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
0
-1
10
10
1
10
2
10
3
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP18N50V2
Figure 9-2. Maxiumum Safe Operating Area for FQPF18N50V2
20
15
ID, Drain Current [A]
10
5
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs. Case Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
FQP18N50V2/FQPF18N50V2
Typical Characteristics
(Continued)
(t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5
10
-1
0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1. Z
JC
(t) = 0 .6 /W M a x .
2 . D u ty F a c to r , D = t1 /t2 3. T
JM
-T
C
=P
DM
*Z
JC
(t)
JC
P DM
s in g le p u ls e
Z
10
-2
t1
t2
10
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP18N50V2
(t) , T h e r m a l R e s p o n s e
10
0
D = 0 .5 0 .2
0 .1
10
-1
N o te s : 1. Z
JC
(t) = 1 .8 /W M a x .
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
2 . D u ty F a c to r , D = t1 /t2 3. T
JM
-T
C
=P
DM
*Z
JC
(t)
P DM t1 t2
0
JC
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF18N50V2
©2002 Fairchild Semiconductor Corporation
Rev. B, August 2002
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