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Details, datasheet, quote on part number:FQP19N20CTSTU
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Datasheet text preview:
FQP19N20C/FQPF19N20C
QFET
FQP19N20C/FQPF19N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
®
Features
· · · · · · 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V Low gate charge ( typical 40.5 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
G GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
S
Absolute Maximum Ratings
Symbol VDSS ID ID M VG S S EAS IA R EAR dv/dt PD T J, T S T G TL
TC = 25°C unless otherwise noted
Param e ter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP19N20C 19.0 12.1 76.0
F QPF 19N20C 200 19. 0 * 12. 1 * 76. 0 * ± 30 433
Units V A A A V mJ A mJ V /ns W W /°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
19.0 13.9 5.5 139 1.11 -55 to +150 300 43 0 .34
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symb ol RJC RJS RJA P a r a m et e r Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP19N20C 0.9 0.5 62.5 FQPF19N20C 2.89 -62.5 Units °C/W °C/W °C/W
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQP19N20C/FQPF19N20C
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
M in
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ ID S S IG S S F IG S S R Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 200 V, VGS = 0 V VDS = 160 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 200 ------0.24 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gF S Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 9.5 A VDS = 40 V, ID = 9.5 A
(Note 4)
2.0 ---
-0.14 10.8
4. 0 0.17 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---830 195 85 1080 255 110 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qg s Qg d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 160 V, ID = 19.0 A, VGS = 10 V
(Note 4, 5)
VDD = 100 V, ID = 19.0 A, RG = 25
(Note 4, 5)
--------
15 150 135 115 40.5 6.0 22.5
40 310 280 240 53.0 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS IS M VSD trr Qr r Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 19.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 19.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---208 1.63
19.0 76.0 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 1.8mH, IAS = 19.0A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 19.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQP19N20C/FQPF19N20C
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
10
1
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
150 C
o
25 C
10
0
o
-55 C
o
10
0
Notes : 1. 250µ s Pulse Test 2. TC = 25
-1
10
10
0
10
1
10
-1
Notes : 1. VDS = 40V 2. 250µ s Pulse Test
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
RDS(ON) [ ], Drain-Source On-Resistance
0.6
IDR, Reverse Drain Current [A]
10
1
0.4
VGS = 10V
10
0
150
0.2
VGS = 20V
Note : TJ = 25
25
Notes : 1. VGS = 0V 2. 250µ s Pulse Test
0.0
0
10
20
30
40
50
60
10
-1
0.0
0.4
0.8
1.2
1.6
2.0
2.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
3000
2500
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VGS, Gate-Source Voltage [V]
10
VDS = 40V VDS = 100V VDS = 160V
Capacitance [pF]
2000
8
Ciss
1500
Coss Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
0 1
6
1000
4
500
2
Note : ID = 19.0A
0 -1 10
10
10
0
0
10
20
30
40
50
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQP19N20C/FQPF19N20C
Typical Characteristics
(Continued)
1.2
3.0
BVDSS, (Normalized) Drain-Source Breakdown Voltage
1.1
RDS(ON), (Normalized) Drain-Source On-Resistance
2.5
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 9.5 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 µA
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
Operation in This Area is Limited by R DS(on)
10
2
10
2
Operation in This Area is Limited by R DS(on)
ID, Drain Current [A]
1 ms
10
1
ID, Drain Current [A]
100 µs
10 µs 100 µs
10
1
10 ms DC
1 ms 10 ms DC
10
0
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
0
Notes :
1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP19N20C
Figure 9-2. Maximum Safe Operating Area for FQPF19N20C
20
15
ID, Drain Current [A]
10
5
0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs Case Temperature
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
FQP19N20C/FQPF19N20C
Typical Characteristics
(Continued)
10
0
ZJC(t), Thermal Response
D = 0 .5 0 .2
10
-1
0 .1 0 .0 5 0 .0 2 0 .0 1
N o te s : 1 . Z J C ( t ) = 0 . 9 0 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z JC ( t)
PDM
s in g le p u ls e
t1
10
-2
t2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP19N20C
ZJC(t), Thermal Response
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1 . Z J C ( t ) = 2 . 8 9 /W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T JM - T C = P D M * Z JC ( t)
0 .0 2 0 .0 1 s in g le p u ls e
PDM t1 t2
0 1
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF19N20C
©2004 Fairchild Semiconductor Corporation
Rev. A, March 2004
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