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Details, datasheet, quote on part number:FQP1N60C
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FQP1N60C / FQPF1N60C
QFET
FQP1N60C / FQPF1N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
TM
Features
· · · · · · 1.1A, 600V, RDS(on) = 11.5 @VGS = 10 V Low gate charge ( typical 4.8nC) Low Crss ( typical 3.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
G! GDS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP1N60C 600 1. 1 0. 6 4. 4
F Q PF 1N60C 1. 1 * 0. 6 * 4. 4 * ± 30 33 1. 1 3. 4 4. 5
U n i ts V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
(Note 2) (Note 1) (Note 1) (Note 3)
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
34 0.27 -55 to +150 300
17 0.13
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol RJ C RC S RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Typ. Thermal Resistance, Junction-to-Ambient FQP1N60C 3. 67 0.5 62. 5 FQPF1N60C 7. 48 -62. 5 Units °C/W °C/W °C/W
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQP1N60C / FQPF1N60C
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0. 6 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = VDS = 40 V, ID = 0.55 A 0.55 A
(Note 4)
2.0 ---
-9. 3 0.75
4. 0 11.5 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 19 3. 5 170 25 4. 5 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 1.1 A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 1.1 A, RG = 25
(Note 4, 5)
--------
7 21 13 27 4. 8 0. 7 2. 7
24 52 36 64 6. 2 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 1.1 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 1.1 A, dIF / dt = 100 A/µs
(Note 4)
------
---190 0.53
1. 1 4. 4 1. 4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 59 mH, IAS = 1.1 A, VDD = 50V, RG = 25, Starting TJ = 25°C 3. ISD 1.1 A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQP1N60C / FQPF1N60C
Typical Characteristics
10
0
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
0
150 C -55 C 25 C
o o
o
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
-2
10
-1
-1
10
10
0
10
1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
30
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 10V
20
I DR , Reverse Drain Current [A]
25
10
0
15
10
VGS = 20V
150 25
10
-1
5
Note : TJ = 25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0 0.0
0.5
1.0
1.5
2.0
2.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
250
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
200
10
VDS = 120V VDS = 300V
Ciss
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
150
VDS = 480V
Coss
100
Notes ; 1. VGS = 0 V 2. f = 1 MHz
6
4
50
Crss
2
Note : ID = 1A
0 -1 10
0 10
0
10
1
0
1
2
3
4
5
6
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQP1N60C / FQPF1N60C
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 0.55 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs Temperature
Figure 8. On-Resistance Variation vs Temperature
10
1
Operation in This Area is Limited by R DS(on)
10
1
Operation in This Area is Limited by R DS(on)
100 µs
10
100 µs 1 ms
ID, Drain Current [A]
ID, Drain Current [A]
0
1 ms 10 ms 100 ms DC
10
0
10 ms 100 ms DC
10
-1
Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
o
10
-1
Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse
o
10
-2
10
0
10
1
10
2
10
3
10
-2
10
0
10
1
10
2
10
3
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 9-1. Maximum Safe Operating Area for FQP1N60C
Figure 9-2. Maximum Safe Operating Area for FQPF1N60C
1.2
1.0
ID, Drain Current [A]
0.8
0.6
0.4
0.2
0.0 25
50
75
100
125
150
TC, Case Temperature []
Figure 10. Maximum Drain Current vs Case Temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQP1N60C / FQPF1N60C
Typical Characteristics
(Continued)
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
N o te s : 1 . Z JC ( t) = 3 .6 7 /W M a x . 2 . D u t y F a c t o r , D = t1 / t 2 3 . T JM - T C = P D M * Z JC ( t)
PDM t1
s in g le p u ls e
10
-1
0 .0 2 0 .0 1
t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11-1. Transient Thermal Response Curve for FQP1N60C
10
1
( t) , T h e r m a l R e s p o n s e
D = 0 .5 0 .2
10
0
0 .1 0 .0 5 0 .0 2
N o te s : 1 . Z JC ( t) = 7 .4 8 /W M a x . 2 . D u t y F a c t o r , D = t 1 / t2 3 . T JM - T C = P D M * Z JC ( t)
PDM t1 t2
10
-1
0 .0 1
Z
JC
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u l s e D u r a t i o n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF1N60C
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
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