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Details, datasheet, quote on part number:FQP24N08
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| Part: | FQP24N08 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => Power MOSFETs |
| Description: | 80V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQP24N08 datasheet File size : 729 kB |
| Request For quote: | Find where to buy FQP24N08
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Datasheet text preview:
FQP24N08
August 2000
FQP24N08
80V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.
QFET
Features
· · · · · · · 24A, 80V, RDS(on) = 0.06 @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
TM
D
!
"
G! GDS
!"
" "
TO-220
FQP Series
!
S
Absolute Maximum Ratings
Symbol VDSS ID ID M VG S S EAS IA R EAR dv/dt PD T J, T S T G TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQP24N08 80 24 17 96 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V /ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
23 0 24 7.5 6.5 75 0.5 -55 to +175 30 0
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 2.0 -62.5 Units °C/W °C/W °C/W
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQP24N08
Electrical Characteristics
Symbol Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max
U nits
Off Characteristics
BVDSS BVDSS / TJ ID S S IG S S F IG S S R Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 80 V, VGS = 0 V VDS = 64 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 80 ------0.08 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gF S Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 12 A VDS = 30 V, ID = 12 A
(Note 4)
2.0 ---
-0 . 048 12
4. 0 0.06 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---580 210 50 750 270 65 pF pF pF
Switching Characteristics
td ( o n ) tr td(off) tf Qg Qg s Qg d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 64 V, ID = 24 A, VGS = 10 V
(Note 4, 5)
VDD = 40 V, ID = 24 A, RG = 25
(Note 4, 5)
--------
10 105 30 35 19 4.2 9.6
30 220 70 80 25 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS IS M VSD trr Qr r Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 24 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 24 A, dIF / dt = 100 A/µs
(Note 4)
------
---63 130
24 96 1. 5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.55mH, IAS = 24A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 24A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQP24N08
Typical Characteristics
ID, Drain Current [A]
ID, Drain Current [A]
10
1
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top :
10
1
175
10
0
10
0
25 -55
Notes : 1. VDS = 30V 2. 250 Pulse Test s
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
-1
10
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
RDS(on) [], Drain-Source On-Resistance
0.16 VGS = 10V 0.12 VGS = 20V 0.08
IDR, Reverse Drain Current [A]
10
1
10
0
0.04
Note : TJ = 25
175
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.00
0
20
40
60
80
100
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1600 1400 1200 1000 800 600 400 200 0 -1 10
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
Coss
10
VDS = 40V VDS = 64V
VGS , Gate-Source Voltage [V]
Ciss
Notes : 1. VGS = 0 V 2. f = 1 MHz
8
Capacitance [pF]
6
Crss
4
2
Note : ID = 24A
10
0
10
1
0
0
2
4
6
8
10
12
14
16
18
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQP24N08
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 12 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
25
Operation in This Area is Limited by R DS(on)
10
2
20
100 µs
ID, Drain Current [A]
1 ms
10
1
ID, Drain Current [A]
10 ms DC
15
10
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
5
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
10
0
D = 0 .5
N o te s : 1 . Z J C( t ) = 2 . 0 / W M a x . 2 . D u ty F a c to r , D = t1/t2 3 . T J M - T C = P D M * Z J C( t )
0 .2 0 .1
10
-1
0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e
PD M t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, August 2000
FQP24N08
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qg s Qg
VGS
Qg d
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A, August 2000
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