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Details, datasheet, quote on part number:FQPF30N06
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Datasheet text preview:
FQPF30N06
May 2001
QFET
FQPF30N06
60V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
· · · · · · · 21A, 60V, RDS(on) = 0.04 @VGS = 10 V Low gate charge ( typical 19 nC) Low Crss ( typical 40 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF30N06 60 21 14.9 84 ± 25
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
280 21 3. 9 7. 0 39 0.26 -55 to +175 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --M ax 3. 85 62. 5 Units °C/W °C/W
©2001 Fairchild Semiconductor Corporation
R ev. A1. May 2001
FQPF30N06
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 60 V, VGS = 0 V VDS = 48 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 60 ------0.06 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 10.5 A VDS = 25 V, ID = 10.5 A
(Note 4)
2.0 ---
-0. 031 13
4. 0 0.04 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---725 270 40 945 350 52 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 48 V, ID = 30 A, VGS = 10 V
(Note 4, 5)
VDD = 30 V, ID = 15 A, RG = 25
(Note 4, 5)
--------
10 85 35 40 19 5. 4 8. 5
30 180 80 90 25 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 21 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 30 A, dIF / dt = 100 A/µs
(Note 4)
------
---45 65
21 84 1. 5 ---
A A V ns nC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 740µH, IAS = 21A, VDD = 25V, RG = 25 , Starting TJ = 25°C 3. ISD 30A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
R ev. A1. May 2001
FQPF30N06
Typical Characteristics
10
2
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
2
ID, Drain Current [A]
ID, Drain Current [A]
10
1
10
1
175 25 -55
Notes : 1. VDS = 25V 2. 250 s Pulse Test
Notes : 1. 250 s Pulse Test 2. TC = 25
10 -1 10
0
10
0
10
1
10
0
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
100
10
2
80
Drain-Source On-Resistance
60
VGS = 10V VGS = 20V
IDR, Reverse Drain Current [A]
R DS(ON) [m ],
10
1
40
20
Note : TJ = 25
175
0
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0 0 20 40 60 80 100 120
10
ID, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
2000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
10
VDS = 30V VDS = 48V
V GS , Gate-Source Voltage [V]
1500
Capacitance [pF]
Coss
1000
8
Ciss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
4
500
Crss
2
Note : ID = 30A
0
0 -1 10
0
4
8
12
16
20
10
0
10
1
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
R ev. A1. May 2001
FQPF30N06
Typical Characteristics
(Continued)
1.2
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.5
1.0
0.5
Notes : 1. VGS = 10 V 2. ID = 15 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Tem erature [ C] p
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
25
Operation in This Area is Limited by R DS(on)
10
2
20
ID , Drain Current [A]
10 ms
10
1
ID , Drain Current [A]
1 ms 100 ms DC
15
10
10
0
Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse
o o
5
10
-1
10
-1
10
0
10
1
10
2
0 25
50
75
100
125
150
175
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
N otes : 1 . Z J C( t ) = 3 . 8 5 / W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )
10
-1
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
R ev. A1. May 2001
FQPF30N06
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3 mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VD D
VD S
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) V DD
tp
DUT
VDS (t) Time
©2001 Fairchild Semiconductor Corporation
R ev. A1. May 2001
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