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Details, datasheet, quote on part number:FQPF3N25
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| Part: | FQPF3N25 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => JFETs (Junction-FETs) => Switching |
| Description: | 250V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQPF3N25 datasheet File size : 657 kB |
| Request For quote: | Find where to buy FQPF3N25
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Datasheet text preview:
FQPF3N25
November 2000
FQPF3N25
250V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.
QFET
Features
· · · · · · 2.3A, 250V, RDS(on) = 2.2 @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
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G! GD S
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TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQPF3N25 250 2. 3 1.45 9. 2 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
40 2. 3 2. 7 5. 5 27 0.22 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --M ax 4. 63 62. 5 Units °C/W °C/W
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQPF3N25
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 250 V, VGS = 0 V VDS = 200 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 250 ------0.24 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 1.15 A VDS = 50 V, ID = 1.15 A
(Note 4)
3.0 ---
-1.75 1. 4
5. 0 2. 2 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---130 30 4. 7 170 40 6. 1 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 200 V, ID = 2.8 A, VGS = 10 V
(Note 4, 5)
VDD = 125 V, ID = 2.8 A, RG = 25
(Note 4, 5)
--------
6. 6 25 5. 5 20 4. 0 1. 1 2. 2
23 60 21 50 5. 2 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.3 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.8 A, dIF / dt = 100 A/µs
(Note 4)
------
---100 0. 3
2. 3 9. 2 1. 5 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 12mH, IAS = 2.3A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 2.8A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQPF3N25
Typical Characteristics
ID, Drain Current [A]
10
0
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
0
150
10
-1
25 -55
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
Notes : 1. VDS = 50V 2. 250 Pulse Test s
10
-1
10
0
10
1
10
-2
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
RDS(on) [], Drain-Source On-Resistance
8 VGS = 10V 6 VGS = 20V 4
IDR , Reverse Drain Current [A]
10
0
2
150
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0
0
1
2
3
4
5
6
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID , Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
300
250
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 50V
10
VDS = 125V VDS = 200V
VGS, Gate-Source Voltage [V]
200
8
Capacitance [pF]
Ciss
150
Coss
Notes : 1. VGS = 0 V 2. f = 1 MHz
6
100
4
50
Crss
2
Note : ID = 2.8 A
0 -1 10
10
0
10
1
0
0
1
2
3
4
5
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQPF3N25
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
Notes : 1. VGS = 10 V 2. ID = 1.4 A
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
2.5
Operation in This Area is Limited by R DS(on)
10
1
2.0
10 ms
10
0
ID, Drain Current [A]
ID, Drain Current [A]
1 ms 100 ms DC
1.5
1.0
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.5
10
-2
10
0
10
1
10
2
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
10
1
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C( t ) = 4 . 6 3 / W M a x . 2 . D u ty F a c to r , D = t1/t 2 3 . T J M - T C = P D M * Z J C( t)
10
-1
0 .0 2 0 .0 1
P DM t1
s in g le p u ls e
JC
t2
Z
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, November 2000
FQPF3N25
Gate Charge Test Circuit & Waveform
50K 12 V 200nF 300 nF
Same Type as DUT VDS
VGS 10V Qgs Qg
VGS
Qgd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off ) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) VDD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A, November 2000
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