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Details, datasheet, quote on part number:FQPF4N60
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| Part: | FQPF4N60 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel |
| Description: | 600V N-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQPF4N60 datasheet File size : 563 kB |
| Request For quote: | Find where to buy FQPF4N60
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Datasheet text preview:
FQPF4N60
April 2000
FQPF4N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
QFET
Features
· · · · · · 2.6A, 600V, RDS(on) = 2.2 @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
D
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G! GD S
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TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQFP4N60 600 2. 6 1.64 10.4 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C)
260 2. 6 3. 6 4. 5 36 0.29 -55 to +150 300
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --M ax 3. 47 62. 5 Units °CW °CW
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF4N60
Electrical CharacteristicsT
Symbol P a r a m e te r
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 ------0. 6 ------10 100 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 1.3 A VDS = 50 V, ID = 1.3 A
(Note 4)
3.0 ---
-1.77 3. 1
5. 0 2. 2 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---520 70 8 670 90 11 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 4.4 A, VGS = 10 V
(Note 4, 5)
VDD = 300 V, ID = 4.4 A, RG = 25
(Note 4, 5)
--------
13 45 25 35 15 3. 4 7. 1
35 100 60 80 20 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.6 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 4.4 A, dIF / dt = 100 A/µs
(Note 4)
------
---250 1. 5
2. 6 10.4 1. 4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 71mH, IAS = 2.6A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 4.4A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF4N60
Typical Characteristics
10
1
ID , Drain Current [A]
ID , Drain Current [A]
VGS 15 V 10 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
10
1
10
0
150 10
0
25 -55
Notes : 1. VDS = 50V 2. 250 Pulse Test s
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
VDS , Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
6
10
1
5
RDS(ON) [ ], Drain-Source On-Resistance
4
VGS = 20V
3
IDR , Reverse Drain Current [A]
VGS = 10V
10
0
2
150
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
1
Note : TJ = 25
0
0
2
4
6
8
10
12
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
800
10
VDS = 120V VDS = 300V VDS = 480V
Ciss
VGS , Gate-Source Voltage [V]
8
Capacitance [pF]
600
Coss
6
400
200
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 4.4 A
0 -1 10
0
10
0
10
1
0
3
6
9
12
15
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF4N60
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Norm lized) a Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Notes : 1. VGS = 10 V 2. ID = 2.2 A
0.9
Notes : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
0
50
100
o
150
200
0.0 -100
-50
0
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature
Figure 8. On-Resistance Variation vs. Temperature
3.0
Operation in This Area is Limited by R DS(on)
2.5
10
1
ID, Drain Current [A]
10 ms
10
0
100 ms DC
ID, Drain Current [A]
1 ms
100 µs
2.0
1.5
1.0
10
-1
Notes : 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0.5
10
-2
10
0
10
1
10
2
10
3
0.0 25
50
75
100
125
150
VDS, Drain-Source Voltage [V]
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
10
-1
N o te s : 1 . Z J C( t ) = 3 . 4 7 /W M a x . 2 . D u ty F a c t o r , D = t1/t 2 3 . T J M - T C = P D M * Z J C( t )
0 .0 2 0 .0 1 s in g le p u ls e
P DM t1 t2
Z
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQPF4N60
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3 mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS RG VGS
RL VD D
VD S
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG 10V
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD ID (t) V DD
tp
DUT
VDS (t) Time
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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