Details, datasheet, quote on part number: FQU6N15
PartFQU6N15
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel
Description150V N-channel QFET
CompanyFairchild Semiconductor
DatasheetDownload FQU6N15 datasheet
Quote
Find where to buy
 
  
Some Part number from the same manufacture Fairchild Semiconductor
FQU6N25 250V N-channel QFET
FQU6N40 400V N-channel QFET
FQU6N40C 400V N-channel Advance QFET C-series
FQU6P25 250V P-channel QFET
FQU7N10 100V N-channel QFET
FQU7N10L 100V N-channel Logic Level QFET
FQU7N20 200V N-channel QFET
FQU7N20L 200V N-channel Logic Level QFET
FQU7N30 300V N-channel QFET
FQU7P06 60V P-channel QFET
FQU7P20 200V P-channel QFET
FQU8N25 250V N-channel QFET
FQU8P10 100V P-channel QFET
FQU9N08 80V N-channel QFET
FQU9N08L 80V N-channel Logic Level QFET
FQU9N15 150V N-channel QFET
FQU9N25 250V N-channel QFET
FRF150D1
FRF450D1
FRF9150D1
FRF9250R4

IRF443 : N-channel Power MOSFETs, 8a, 450 V/500v

MBRP2045NTU : Schottky Barrier Rectifier

FDV302 : Digital FET, P-channel

FAN4800ASNY : Pmic - Pfc (power Factor Correction) Integrated Circuit (ics) Tube 240kHz ~ 268kHz 11 V ~ 26 V; IC CTLR COMBO PFC/PWM 16-DIP Specifications: Packaging: Tube ; Package / Case: 16-DIP (0.300", 7.62mm) ; Voltage - Supply: 11 V ~ 26 V ; Mode: Average Current ; Frequency - Switching: 240kHz ~ 268kHz ; Current - Startup: 30A ; Operating Temperature: -40C ~ 105C ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

HUFA75617D3ST : Fet - Single Discrete Semiconductor Product 16A 100V 64W Surface Mount; MOSFET N-CH 100V 16A DPAK Specifications: Mounting Type: Surface Mount ; FET Type: MOSFET N-Channel, Metal Oxide ; Drain to Source Voltage (Vdss): 100V ; Current - Continuous Drain (Id) @ 25 C: 16A ; Rds On (Max) @ Id, Vgs: 90 mOhm @ 16A, 10V ; Input Capacitance (Ciss) @ Vds: 570pF @ 25V ; Power - Max: 64W ; Packaging: Tape

PN4416 : Rf Fet Discrete Semiconductor Product - 30V N-Channel JFET; MOSFET RF N-CHAN 30V TO-92 Specifications: Transistor Type: N-Channel JFET ; Voltage - Rated: 30V ; Current Rating: - ; Noise Figure: 4dB ; Frequency: 400MHz ; Gain: - ; Voltage - Test: - ; Current - Test: - ; Lead Free Status: Lead Free ; RoHS Status: RoHS Compliant

H11D1.3SDL : 1 CHANNEL TRANSISTOR OUTPUT OPTOCOUPLER Specifications: Mounting Option: DIP-6 ; Output: Phototransistor ; Isolation Voltage: 5300 volts ; Collector Emitter Breakdown Voltage: 300 volts

NDB4060LL86Z : 15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Specifications: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 60 volts ; rDS(on): 0.0800 ohms ; Number of units in IC: 1

Same catergory

2SC3380 : Small Signal General Purpose Transistor. Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips.

2SD0874 : VCEO(V) = 25 ;; IC(A) = 1 ;; HFE(min) = 85 ;; HFE(max) = 340 ;; Package = MiniP3-F1.

DSF21545SV : 3200a 4500v Disc Fast Recovery Diode. APPLICATIONS s The is a purpose designed freewheel diode to complement the DG858BW GTO in inverter circuits, using energy recovery snubbers. s The DSF21545SV is designed for fast turn-on thus minimising reverse current through the GTO. s Low recovered charge for low losses. DSF21545SV is housed in a similar outline to that of the DG858BW therefore offering.

PH1214-25S : 1200-1400 MHz,25 W, 1 MS Pulse,radar Pulsed Power Transistor. Radar Pulsed Power Transistor, 25W, lps Pulse, 10% Duty - 1.4 GHz - NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input Impedance Matching Hermetic Metal/Ceramic Package I s .

050021R4ABZP : CAPACITOR, CERAMIC, MULTILAYER, 50 V, BP, 0.0000014 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 1.40E-6 microF ; Capacitance Tolerance: 7 (+/- %) ; WVDC: 50 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

BCX19TRL : 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB. s: Polarity: NPN.

BDX16AA : 3 A, 140 V, PNP, Si, POWER TRANSISTOR, TO-213AA. s: Polarity: PNP ; Package Type: TO-66, 2 PIN.

BLR2L : RESISTOR, CURRENT SENSE, 2 W, 5; 10 %, 100 ppm, 0.008 ohm - 0.05 ohm, SURFACE MOUNT. s: Category / Application: Current Sensing, General Use ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating Temperature: -40 to 180 C (-40 to 356 F).

FR1AA : 1 A, 50 V, SILICON, SIGNAL DIODE, DO-221AC. s: Package: GREEN, PLASTIC, SMA FLAT PACKAGE-2 ; Number of Diodes: 1 ; IF: 1000 mA ; RoHS Compliant: RoHS.

HCB1290-301 : GENERAL PURPOSE INDUCTOR. s: Application: General Purpose. Tolerance of inductance 15% Isat is the DC current which cause the inductance drop not lower than Li. Ir is the DC current which cause the surface temperature of the part increase approximately 40 J. Operating temperature: to 125J (Self-temperature rise included). .

HSM2838C-E : 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE. s: Arrangement: Common Catode ; Diode Type: General Purpose ; IF: 100 mA ; RoHS Compliant: RoHS ; Package: MPAK-3 ; Pin Count: 3 ; Number of Diodes: 2.

IXBOD1-13 : 1300 V, SYMMETRICAL BOD. s: Thyristor Type: Breakover Diode ; Pin Count: 2 ; Standards and Certifications: RoHS.

NOSW686M002A0150 : CAPACITOR, NIOBIUM, 2.5 V, 68 uF, SURFACE MOUNT, 6032LM. s: Configuration / Form Factor: Chip Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Niobium / Niobium Oxide ; RoHS Compliant: Yes ; Capacitance Range: 68 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 2.5 volts ; Mounting Style: Surface Mount Technology ; Operating Temperature:.

Q2010F511 : 200 V, 10 A, TRIAC, TO-202AB. s: Thyristor Type: Triac ; Pin Count: 3 ; VDRM: 200 volts ; IT(RMS): 10 amps ; Standards and Certifications: RoHS.

RVC0402 : RESISTOR, METAL GLAZE/THICK FILM, 0.063 W, 1; 5 %, 100; 200; 400 ppm, 10 ohm - 100000000 ohm, SURFACE MOUNT, 0402. s: Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0402, CHIP, ROHS COMPLIANT ; Operating DC Voltage: 100 volts ; Operating Temperature: -55 to 155 C (-67.

SIHP24N65E-GE3 : POWER, FET. VDS (V) at TJ max. RDS(on) max. C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration VGS 21 37 Single Low Figure-of-Merit (FOM) Ron x Qg Low Input Capacitance (Ciss) Reduced Switching and Conduction Losses Ultra Low Gate Charge (Qg) Avalanche Energy Rated (UIS) Material categorization: For definitions please see www.vishay.com/doc?99912 APPLICATIONS Server.

SRS680UF : 6 A, SILICON, RECTIFIER DIODE. s: Configuration: Single ; Package: 601, 2 PIN ; Pin Count: 2 ; Number of Diodes: 1 ; IF: 6000 mA ; trr: 0.2500 ns.

2SC3325-O : 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236. s: Polarity: NPN ; Package Type: 2-3F1A, S-MINI, SC-59, TO-236MOD, 3 PIN.

 
0-C     D-L     M-R     S-Z