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Part: FQU6N40CTU
Category:
Description: 400V N-channel Advance QFET C-series
Company: Fairchild Semiconductor
Datasheet: Download FQU6N40CTU datasheet File size : 203 kB
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FQD6N40C / FQU6N40C
FQD6N40C / FQU6N40C
400V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.
QFET
Features
· · · · · · 4.5A, 400V, RDS(on) = 1.0 @VGS = 10 V Low gate charge ( typical 16nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
D D
!
G
S
D-PAK
FQD Series
I-PAK
GDS
FQU Series
G!
!
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramet er Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD6N40C / FQU6N40C 400 4. 5 2. 7 18 ± 30
(Note 2) (Note 1) (Note 1) (Note 3)
U n i ts V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C)* Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
270 4. 5 4. 8 4. 5 2. 5 48 0.38 -55 to +150 300
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient.* Thermal Resistance, Junction-to-Ambient. Typ ---M ax 2.6 50 110 Units °C/W °C/W °C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQD6N40C / FQU6N40C
Electrical Characteristics
Symbol P a r a m e te r
TC = 25°C unless otherwise noted
Test Conditions
Min
Typ
Ma x
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 400 V, VGS = 0 V VDS = 320 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 400 ------0.54 ------1 10 100 -100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2.25A VDS = 40 V, ID = 2.25A
(Note 4)
2.0 ---
-0.83 4. 7
4. 0 1 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---480 80 15 625 105 20 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 320 V, ID = 6A, VGS = 10 V
(Note 4, 5)
VDD = 200 V, ID = 6A, RG = 25
(Note 4, 5)
--------
13 65 21 38 16 2. 3 8. 2
35 140 55 85 20 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 4.5 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 6 A, dIF / dt = 100 A/µs
(Note 4)
------
---230 1. 7
4. 5 18 1. 4 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 13.7 mH, IAS = 6 A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 6A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
FQD6N40C / FQU6N40C
Typical Characteristics
10
1
ID, Drain Current [A]
ID, Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V Bottom : 5.0 V Top :
10
1
150 C 25 C
10
0
o
10
0
o
-55 C
o
10
-1
Notes : 1. 250 s Pulse Test 2. TC = 25
-1
Notes : 1. VDS = 40V 2. 250 s Pulse Test
10
10
0
10
1
10
-1
2
4
6
8
10
VDS, Drain-Source Voltage [V]
VGS, Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.5 10
1
3.0
RDS(ON) [ ], Drain-Source On-Resistance
2.5
2.0
IDR, Reverse Drain Current [A]
VGS = 10V
10
0
1.5
VGS = 20V
1.0
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 s Pulse Test
0.5
0
5
10
15
20
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
1200
1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = 80V
10
VDS = 200V
800
VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
Ciss
600
VDS = 320V
Coss
6
400
Crss
200
Notes ; 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = 6A
0 -1 10
0 10
0
10
1
0
5
10
15
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2003 Fairchild Semiconductor Corporation
Rev. A, October 2003
Others parts begin by fq
FQ-1 FQ-2 FQ-3 FQ-4 FQ-5 FQ-6
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