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Details, datasheet, quote on part number:FQU6P25
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| Part: | FQU6P25 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | 250V P-channel QFET |
| Company: | Fairchild Semiconductor |
| Datasheet: | Download FQU6P25 datasheet File size : 524 kB |
| Request For quote: | Find where to buy FQU6P25
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Datasheet text preview:
FQD6P25 / FQU6P25
April 2000
FQD6P25 / FQU6P25
250V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters.
QFET
Features
· · · · · · -4.7A, -250V, RDS(on) = 1.1 @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability
TM
D G! G S
S
!
D-PAK
FQD Series
I-PAK
GDS
FQU Series
!
!
D
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
(Note 1)
FQD6P25 / FQU6P25 -250 -4. 7 -3. 0 -18. 8 ±30
(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W W/°C °C °C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C)
540 -4. 7 5. 5 -5. 5 2. 5 55 0.44 -55 to +150 300
TJ, TSTG TL
- Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8from case for 5 seconds
Thermal Characteristics
Symbol RJ C RJ A RJ A P arameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---M ax 2. 27 50 110 Units °CW °CW °CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2000 Fairchild Semiconductor International Rev. A, April 2000
FQD6P25 / FQU6P25
Electrical CharacteristicsT
Symbol P a r a m e te r
C
= 25°C unless otherwise noted
Test Conditions
Min
Typ
M ax
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -250 V, VGS = 0 V VDS = -200 V, TC = 125°C VGS = -30 V, VDS = 0 V VGS = 30 V, VDS = 0 V -250 -------0.1 -------1 -10 -100 100 V V/°C µA µA nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 µA VGS = -10 V, ID = -2.35 A VDS = -40 V, ID = -2.35 A
(Note 4)
-3. 0 ---
-0. 82 3.0
-5. 0 1.1 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---600 115 20 780 150 25 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -125 V, ID = -6.0 A, RG = 25
(Note 4, 5)
--------
13 75 40 50 21 4.7 10. 7
35 160 90 110 27 ---
ns ns ns ns nC nC nC
VDS = -200 V, ID = -6.0 A, VGS = -10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -4.7 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -6.0 A, dIF / dt = 100 A/µs
(Note 4)
------
---170 1.1
-4. 7 -18.8 -5. 0 ---
A A V ns µC
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 39mH, IAS = -4.7A, VDD = -50V, RG = 25 , Starting TJ = 25°C 3. ISD -6.0A, di/dt 300A/µs, VDD BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width 300µs, Duty cycle 2% 5. Essentially independent of operating temperature
©2000 Fairchild Semiconductor International
Rev. A, April 2000
FQD6P25 / FQU6P25
Typical Characteristics
10
1
-ID , Drain Current [A]
-I D , Drain Current [A]
VGS -15 V -10 V -8.0 V -7.0 V -6.5 V -6.0 V Bottom : -5.5 V Top :
10
1
10
0
150 10
0
25 -55
Notes : 1. VDS = -40V 2. 250 Pulse Test s
10
-1
Notes : 1. 250 Pulse Test s 2. TC = 25
10
-1
10
0
10
1
10
-1
2
4
6
8
10
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
3.0
VGS = - 10V 2.0 VGS = - 20V
1.5
-I DR , Reverse Drain Current [A]
2.5
10
1
RDS(on) [], Drain-Source On-Resistance
10
0
1.0
0.5
Note : TJ = 25
150
25
Notes : 1. VGS = 0V 2. 250 Pulse Test s
0.0
0
4
8
12
16
20
10
-1
-ID , Drain Current [A]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
1400 1200 1000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
12
VDS = -50V
10
VDS = -125V VDS = -200V
Ciss Coss
-VGS, Gate-Source Voltage [V]
8
Capacitance [pF]
800 600 400 200 0 -1 10
6
Crss
Notes : 1. VGS = 0 V 2. f = 1 MHz
4
2
Note : ID = -6.0 A
10
0
10
1
0
0
4
8
12
16
20
24
-VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor International
Rev. A, April 2000
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